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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMT10H010LSS-13
Diodes Incorporated
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DMT10H010LSS-13 - Diodes Incorporated

Manifakti Nimewo Pati
DMT10H010LSS-13
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMT10H010LSS-13
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 11.5A/29.5A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
DMT10H010LSS.pdf
RoHs Status
Nan stok: 47300

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon DMT10H010LSS-13 Tech
Diodes Incorporated - DMT10H010LSS-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMT10H010LSS-13

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 2.8V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri -  
Rds Sou (Max) @ Id, Vgs 9.5mOhm @ 13A, 10V  
Dissipasyon pouvwa (Max) 1.4W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3000 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 71 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11.5A (Ta), 29.5A (Tc)  
Nimewo pwodwi baz DMT10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMT10H010LSS-13.

Pwodwi atribi DMT10H010LSS-13 DMT3004LFG-13 DMT10H014LSS-13 DMT10H015LK3-13
Nimewo Pati DMT10H010LSS-13 DMT3004LFG-13 DMT10H014LSS-13 DMT10H015LK3-13
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Rds Sou (Max) @ Id, Vgs 9.5mOhm @ 13A, 10V 4.5mOhm @ 20A, 10V 15mOhm @ 20A, 10V 15mOhm @ 20A, 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz DMT10 DMT3004 DMT10 DMT10
Kouran - Kontini Drain (Id) @ 25 ° C 11.5A (Ta), 29.5A (Tc) 10.4A (Ta), 25A (Tc) 8.9A (Ta) 50A (Tc)
Drenaj Sous Voltage (Vdss) 100 V 30 V 100 V 100 V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-PowerVDFN 8-SOIC (0.154", 3.90mm Width) TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (th) (Max) @ Id 2.8V @ 250µA 3V @ 250µA 3V @ 250µA 3.5V @ 250µA
Seri - Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Kapasite Antre (Ciss) (Max) @ Vds 3000 pF @ 50 V 2370 pF @ 15 V 1871 pF @ 50 V 1871 pF @ 50 V
Dissipasyon pouvwa (Max) 1.4W (Ta) 2.1W (Ta), 42W (Tc) 1.2W (Ta) 2.9W (Ta)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 44 nC @ 10 V 33.3 nC @ 10 V 33.3 nC @ 10 V
Vgs (Max) ±20V +20V, -16V ±20V ±20V
FET Feature - - - -
Founisè Aparèy pake 8-SO PowerDI3333-8 8-SO TO-252-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

DMT10H010LSS-13 fich PDF

Download DMT10H010LSS-13 PDF fich ak dokiman Diodes Incorporated pou DMT10H010LSS-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
Asanble PCN/orijin
Mult Dev Assembly/Materials 25/Mar/2019.pdf
Fich
DMT10H010LSS.pdf

Shipment

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Sètifikasyon & Manm

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Diodes Incorporated

DMT10H010LSS-13

Diodes Incorporated
32D-DMT10H010LSS-13

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