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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayMBR10200CT-E1
MBR10200CT-E1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MBR10200CT-E1 - Diodes Incorporated

Manifakti Nimewo Pati
MBR10200CT-E1
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-MBR10200CT-E1
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 200V TO220
Deskripsyon detaye
Pake
TO-220-3
Done fèy
MBR10200C.pdf
RoHs Status
Nan stok: 4370

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon MBR10200CT-E1 Tech
Diodes Incorporated - MBR10200CT-E1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - MBR10200CT-E1

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 5 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-220-3  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-220-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction 150°C (Max)  
Mounting Kalite Through Hole  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 150 µA @ 200 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 5A  
Nimewo pwodwi baz MBR10200  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated MBR10200CT-E1.

Pwodwi atribi MBR10200CT-E1 MBR10200CT MBR10200CTF-E1 MBR10200CT
Nimewo Pati MBR10200CT-E1 MBR10200CT MBR10200CTF-E1 MBR10200CT
Manifakti Diodes Incorporated Taiwan Semiconductor Corporation Diodes Incorporated SMC Diode Solutions
Kouran - Reverse Leakage @ Vr 150 µA @ 200 V 100 µA @ 200 V 150 µA @ 200 V 1 mA @ 200 V
Founisè Aparèy pake TO-220-3 TO-220AB TO-220F-3 TO-220AB
Pake / Ka TO-220-3 TO-220-3 TO-220-3 Full Pack TO-220-3
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 5A 10A 5A -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Teknoloji Schottky Schottky Schottky Schottky
Pakèt Tube Tube Tube Tube
Operating Tanperati - Junction 150°C (Max) -55°C ~ 150°C 150°C (Max) -55°C ~ 150°C
Seri - - - -
Nimewo pwodwi baz MBR10200 MBR1020 MBR10200 MBR10200
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Voltage - DC ranvèse (Vr) (Max) 200 V 200 V 200 V 200 V
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 5 A 980 mV @ 10 A 950 mV @ 5 A 980 mV @ 5 A

MBR10200CT-E1 fich PDF

Download MBR10200CT-E1 PDF fich ak dokiman Diodes Incorporated pou MBR10200CT-E1 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN obsolescence/ eol
Mult Devices EOL 05/Feb/2019.pdf
Fich
MBR10200C.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
MBR10200CT-E1 Image

MBR10200CT-E1

Diodes Incorporated
32D-MBR10200CT-E1

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