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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayZXMN3F31DN8TA
Diodes Incorporated
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

ZXMN3F31DN8TA - Diodes Incorporated

Manifakti Nimewo Pati
ZXMN3F31DN8TA
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-ZXMN3F31DN8TA
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 5.7A 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
ZXMN3F31DN8.pdf
RoHs Status
Nan stok: 55080

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon ZXMN3F31DN8TA Tech
Diodes Incorporated - ZXMN3F31DN8TA espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - ZXMN3F31DN8TA

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri -  
Rds Sou (Max) @ Id, Vgs 24mOhm @ 7A, 10V  
Pouvwa - Max 1.8W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 608pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 12.9nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.7A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz ZXMN3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated ZXMN3F31DN8TA.

Pwodwi atribi ZXMN3F31DN8TA ZXMN3G32DN8TA ZXMN3F31DN8TC ZXMN3G32DN8TC
Nimewo Pati ZXMN3F31DN8TA ZXMN3G32DN8TA ZXMN3F31DN8TC ZXMN3G32DN8TC
Manifakti Diodes Incorporated Diodes Incorporated VBSEMI DIODES/ZETEX
Nimewo pwodwi baz ZXMN3 ZXMN3 - -
Mounting Kalite Surface Mount Surface Mount - -
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA - -
Seri - - - -
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) - -
Rds Sou (Max) @ Id, Vgs 24mOhm @ 7A, 10V 28mOhm @ 6A, 10V - -
FET Feature Logic Level Gate Logic Level Gate - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - -
Pòtay Charge (Qg) (Max) @ Vgs 12.9nC @ 10V 10.5nC @ 10V - -
Drenaj Sous Voltage (Vdss) 30V 30V - -
Founisè Aparèy pake 8-SO 8-SO - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Kapasite Antre (Ciss) (Max) @ Vds 608pF @ 15V 472pF @ 15V - -
Kouran - Kontini Drain (Id) @ 25 ° C 5.7A 5.5A - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Pouvwa - Max 1.8W 1.8W - -

ZXMN3F31DN8TA fich PDF

Download ZXMN3F31DN8TA PDF fich ak dokiman Diodes Incorporated pou ZXMN3F31DN8TA - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN konsepsyon/spesifikasyon
Wafer Site/Bond Wire 8/Apr/2013.pdf
Asanble PCN/orijin
Assembly/Test Site Addition 01/Jun/2015.pdf
Fich
ZXMN3F31DN8.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Diodes Incorporated

ZXMN3F31DN8TA

Diodes Incorporated
32D-ZXMN3F31DN8TA

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