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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleEGP10D
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

EGP10D - Fairchild Semiconductor

Manifakti Nimewo Pati
EGP10D
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-EGP10D
ECAD modèl
Pati Deskripsyon
RECTIFIER DIODE, 1A, 200V, DO-41
Deskripsyon detaye
Pake
DO-204AL, DO-41, Axial
Done fèy
EGP10D.pdf
Nan stok: 322590

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon EGP10D Tech
Fairchild Semiconductor - EGP10D espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - EGP10D

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake DO-204AL (DO-41)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 50 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-204AL, DO-41, Axial  
Pakèt Bulk  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F -  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor EGP10D.

Pwodwi atribi EGP10D EGP10G-E3/73 EGP10D-E3/73 EGP10J
Nimewo Pati EGP10D EGP10G-E3/73 EGP10D-E3/73 EGP10J
Manifakti Fairchild Semiconductor Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Fairchild Semiconductor
Teknoloji Standard Standard Standard Standard
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 1 A 1.25 V @ 1 A 950 mV @ 1 A 1.7 V @ 1 A
Founisè Aparèy pake DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Pakèt Bulk Cut Tape (CT) Tape & Box (TB) Bulk
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 600 V
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Kapasite @ Vr, F - 15pF @ 4V, 1MHz 22pF @ 4V, 1MHz -
Tan rekiperasyon ranvèse (trr) 50 ns 50 ns 50 ns 75 ns
Pake / Ka DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Voltage - DC ranvèse (Vr) (Max) 200 V 400 V 200 V 600 V
Seri - SUPERECTIFIER® SUPERECTIFIER® -

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

EGP10D

Fairchild Semiconductor
32D-EGP10D

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