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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDB150N10
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDB150N10 - Fairchild Semiconductor

Manifakti Nimewo Pati
FDB150N10
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDB150N10
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR, 5
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FDB150N10.pdf
Nan stok: 4080

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDB150N10 Tech
Fairchild Semiconductor - FDB150N10 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDB150N10

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 15mOhm @ 49A, 10V  
Dissipasyon pouvwa (Max) 110W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4760 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 69 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 57A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDB150N10.

Pwodwi atribi FDB150N10 FDB15N50 FDB14N30TM FDB16AN08A0
Nimewo Pati FDB150N10 FDB15N50 FDB14N30TM FDB16AN08A0
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±30V ±30V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 4760 pF @ 25 V 1850 pF @ 25 V 1060 pF @ 25 V 1857 pF @ 25 V
FET Feature - - - -
Dissipasyon pouvwa (Max) 110W (Tc) 300W (Tc) 140W (Tc) 135W (Tc)
Drenaj Sous Voltage (Vdss) 100 V 500 V 300 V 75 V
Pakèt Bulk Tape & Reel (TR) Bulk Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 6V, 10V
Rds Sou (Max) @ Id, Vgs 15mOhm @ 49A, 10V 380mOhm @ 7.5A, 10V 290mOhm @ 7A, 10V 16mOhm @ 58A, 10V
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Pòtay Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 41 nC @ 10 V 25 nC @ 10 V 42 nC @ 10 V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 57A (Tc) 15A (Tc) 14A (Tc) 9A (Ta), 58A (Tc)
Seri PowerTrench® - UniFET™ PowerTrench®

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDB150N10

Fairchild Semiconductor
32D-FDB150N10

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