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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDB6021P
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDB6021P - Fairchild Semiconductor

Manifakti Nimewo Pati
FDB6021P
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDB6021P
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 28A TO263AB
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FDB6021P.pdf
RoHs Status
Nan stok: 42770

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDB6021P Tech
Fairchild Semiconductor - FDB6021P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDB6021P

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK (TO-263)  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 30mOhm @ 14A, 4.5V  
Dissipasyon pouvwa (Max) 37W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -65°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1890 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 28A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDB6021P.

Pwodwi atribi FDB6021P FDB5690 FDB5690 FDB6030BL
Nimewo Pati FDB6021P FDB5690 FDB5690 FDB6030BL
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Operating Tanperati -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 1890 pF @ 10 V 1120 pF @ 25 V 1120 pF @ 25 V 1160 pF @ 15 V
Dissipasyon pouvwa (Max) 37W (Tc) 58W (Tc) 58W (Tc) 60W (Tc)
Fèt tip P-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 1.5V @ 250µA 4V @ 250µA 4V @ 250µA 3V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 28A (Ta) 32A (Tc) 32A (Tc) 40A (Tc)
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Rds Sou (Max) @ Id, Vgs 30mOhm @ 14A, 4.5V 27mOhm @ 16A, 10V 27mOhm @ 16A, 10V 18mOhm @ 20A, 10V
Drenaj Sous Voltage (Vdss) 20 V 60 V 60 V 30 V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Founisè Aparèy pake D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Vgs (Max) ±8V ±20V ±20V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V 33 nC @ 10 V 33 nC @ 10 V 17 nC @ 5 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 6V, 10V 6V, 10V 4.5V, 10V
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Bulk Tape & Reel (TR) Bulk Bulk
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

Shipment

Tan livrezon

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    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDB6021P

Fairchild Semiconductor
32D-FDB6021P

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