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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDB8030L
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDB8030L - Fairchild Semiconductor

Manifakti Nimewo Pati
FDB8030L
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDB8030L
ECAD modèl
Pati Deskripsyon
80A, 30V, 0.0035OHM, N-CHANNEL,
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
FDB8030L.pdf
RoHs Status
Nan stok: 5480

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDB8030L Tech
Fairchild Semiconductor - FDB8030L espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDB8030L

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-263AB  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 3.5mOhm @ 80A, 10V  
Dissipasyon pouvwa (Max) 187W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -65°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 10500 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Ta)  
Nimewo pwodwi baz FDB803  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDB8030L.

Pwodwi atribi FDB8030L FDB8132_F085 FDB7030L FDB8030L
Nimewo Pati FDB8030L FDB8132_F085 FDB7030L FDB8030L
Manifakti Fairchild Semiconductor onsemi onsemi onsemi
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Rds Sou (Max) @ Id, Vgs 3.5mOhm @ 80A, 10V 1.6mOhm @ 80A, 10V 7mOhm @ 40A, 10V 3.5mOhm @ 80A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri PowerTrench® Automotive, AEC-Q101, PowerTrench® PowerTrench® PowerTrench®
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Ta) 80A (Tc) 80A (Ta) 80A (Ta)
Nimewo pwodwi baz FDB803 FDB813 FDB703 FDB803
Operating Tanperati -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 5 V 350 nC @ 13 V 33 nC @ 5 V 170 nC @ 5 V
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 10500 pF @ 15 V 14100 pF @ 15 V 2440 pF @ 15 V 10500 pF @ 15 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Founisè Aparèy pake TO-263AB D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature - - - -
Vgs (th) (Max) @ Id 2V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA
Dissipasyon pouvwa (Max) 187W (Tc) 341W (Tc) 68W (Tc) 187W (Tc)

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDB8030L

Fairchild Semiconductor
32D-FDB8030L

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