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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayFDC6310P
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDC6310P - Fairchild Semiconductor

Manifakti Nimewo Pati
FDC6310P
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDC6310P
ECAD modèl
Pati Deskripsyon
SMALL SIGNAL FIELD-EFFECT TRANSI
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
FDC6310P.pdf
Nan stok: 4760

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDC6310P Tech
Fairchild Semiconductor - FDC6310P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDC6310P

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SuperSOT™-6  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 125mOhm @ 2.2A, 4.5V  
Pouvwa - Max 700mW  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 337pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz FDC6310  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDC6310P.

Pwodwi atribi FDC6310P FDC6312P FDC6310P FDC6306P
Nimewo Pati FDC6310P FDC6312P FDC6310P FDC6306P
Manifakti Fairchild Semiconductor onsemi onsemi onsemi
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Vgs (th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Founisè Aparèy pake SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Pòtay Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V 7nC @ 4.5V 5.2nC @ 4.5V 4.2nC @ 4.5V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 337pF @ 10V 467pF @ 10V 337pF @ 10V 441pF @ 10V
Pouvwa - Max 700mW 700mW 700mW 700mW
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A 2.3A 2.2A 1.9A
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 20V 20V 20V 20V
Rds Sou (Max) @ Id, Vgs 125mOhm @ 2.2A, 4.5V 115mOhm @ 2.3A, 4.5V 125mOhm @ 2.2A, 4.5V 170mOhm @ 1.9A, 4.5V
Nimewo pwodwi baz FDC6310 FDC6312 FDC6310 FDC6306
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDC6310P

Fairchild Semiconductor
32D-FDC6310P

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