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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDMS8025S
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDMS8025S - Fairchild Semiconductor

Manifakti Nimewo Pati
FDMS8025S
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDMS8025S
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 24A/49A 8PQFN
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
FDMS8025S.pdf
Nan stok: 69250

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDMS8025S Tech
Fairchild Semiconductor - FDMS8025S espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDMS8025S

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 3V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri PowerTrench®, SyncFET™  
Rds Sou (Max) @ Id, Vgs 2.8mOhm @ 24A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 50W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3000 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 24A (Ta), 49A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDMS8025S.

Pwodwi atribi FDMS8025S FDMS8023S FDMS8020 FDMS8020
Nimewo Pati FDMS8025S FDMS8023S FDMS8020 FDMS8020
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Vgs (th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 250µA 3V @ 250µA
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds Sou (Max) @ Id, Vgs 2.8mOhm @ 24A, 10V 2.4mOhm @ 26A, 10V 2.5mOhm @ 26A, 10V 2.5mOhm @ 26A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Dissipasyon pouvwa (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 59W (Tc) 2.5W (Ta), 65W (Tc) 2.5W (Ta), 65W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri PowerTrench®, SyncFET™ PowerTrench®, SyncFET™ PowerTrench® PowerTrench®
Pakèt Bulk Tape & Reel (TR) Bulk Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 57 nC @ 10 V 61 nC @ 10 V 61 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 24A (Ta), 49A (Tc) 26A (Ta), 49A (Tc) 26A (Ta), 42A (Tc) 26A (Ta), 42A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 3000 pF @ 15 V 3550 pF @ 15 V 3800 pF @ 15 V 3800 pF @ 15 V

Shipment

Tan livrezon

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Metòd livrezon

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDMS8025S

Fairchild Semiconductor
32D-FDMS8025S

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