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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDPF5N50FT
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDPF5N50FT - Fairchild Semiconductor

Manifakti Nimewo Pati
FDPF5N50FT
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDPF5N50FT
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR, 4
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
FDPF5N50FT.pdf
Nan stok: 49090

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDPF5N50FT Tech
Fairchild Semiconductor - FDPF5N50FT espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDPF5N50FT

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220F-3  
Seri UniFET™  
Rds Sou (Max) @ Id, Vgs 1.55Ohm @ 2.25A, 10V  
Dissipasyon pouvwa (Max) 28W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 700 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDPF5N50FT.

Pwodwi atribi FDPF5N50FT FDPF44N25TRDTU FDPF51N25 FDPF5N50NZF
Nimewo Pati FDPF5N50FT FDPF44N25TRDTU FDPF51N25 FDPF5N50NZF
Manifakti Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A (Tc) 44A (Tc) 51A (Tc) 4.2A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 61 nC @ 10 V 70 nC @ 10 V 12 nC @ 10 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
FET Feature - - - -
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri UniFET™ UniFET™ UniFET™ UniFET-II™
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±30V ±30V ±30V ±25V
Founisè Aparèy pake TO-220F-3 TO-220F (LG-Formed) TO-220F-3 TO-220F-3
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack, Formed Leads TO-220-3 Full Pack TO-220-3 Full Pack
Pakèt Bulk Bulk Tube Bulk
Drenaj Sous Voltage (Vdss) 500 V 250 V 250 V 500 V
Kapasite Antre (Ciss) (Max) @ Vds 700 pF @ 25 V 2870 pF @ 25 V 3410 pF @ 25 V 485 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 1.55Ohm @ 2.25A, 10V 69mOhm @ 22A, 10V 60mOhm @ 25.5A, 10V 1.75Ohm @ 2.1A, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 28W (Tc) 38W (Tc) 38W (Tc) 30W (Tc)

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Sètifikasyon & Manm

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Fairchild Semiconductor

FDPF5N50FT

Fairchild Semiconductor
32D-FDPF5N50FT

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