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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDS6670AS
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDS6670AS - Fairchild Semiconductor

Manifakti Nimewo Pati
FDS6670AS
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDS6670AS
ECAD modèl
Pati Deskripsyon
SMALL SIGNAL FIELD-EFFECT TRANSI
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
FDS6670AS.pdf
Nan stok: 4290

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDS6670AS Tech
Fairchild Semiconductor - FDS6670AS espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDS6670AS

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 3V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri PowerTrench®, SyncFET™  
Rds Sou (Max) @ Id, Vgs 9mOhm @ 13.5A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1540 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 13.5A (Ta)  
Nimewo pwodwi baz FDS66  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDS6670AS.

Pwodwi atribi FDS6670AS FDS6672A FDS6670AS FDS6672A
Nimewo Pati FDS6670AS FDS6672A FDS6670AS FDS6672A
Manifakti Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 13.5A (Ta) 12.5A (Ta) 13.5A (Ta) 12.5A (Ta)
Vgs (th) (Max) @ Id 3V @ 1mA 2V @ 250µA 3V @ 1mA 2V @ 250µA
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
FET Feature - - - -
Vgs (Max) ±20V ±12V ±20V ±12V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 1540 pF @ 15 V 5070 pF @ 15 V 1540 pF @ 15 V 5070 pF @ 15 V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 46 nC @ 4.5 V 38 nC @ 10 V 46 nC @ 4.5 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Bulk Bulk Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Seri PowerTrench®, SyncFET™ PowerTrench® PowerTrench®, SyncFET™ PowerTrench®
Rds Sou (Max) @ Id, Vgs 9mOhm @ 13.5A, 10V 8mOhm @ 14A, 10V 9mOhm @ 13.5A, 10V 8mOhm @ 14A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz FDS66 - FDS66 FDS66
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDS6670AS

Fairchild Semiconductor
32D-FDS6670AS

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