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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDS6679AZ
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDS6679AZ - Fairchild Semiconductor

Manifakti Nimewo Pati
FDS6679AZ
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDS6679AZ
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR, 1
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
FDS6679AZ.pdf
Nan stok: 3630

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDS6679AZ Tech
Fairchild Semiconductor - FDS6679AZ espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDS6679AZ

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 9.3mOhm @ 13A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3845 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 96 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDS6679AZ.

Pwodwi atribi FDS6679AZ FDS6679Z FDS6679Z FDS6680A
Nimewo Pati FDS6679AZ FDS6679Z FDS6679Z FDS6680A
Manifakti Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Vgs (Max) ±25V +20V, -25V +20V, -25V ±20V
Pakèt Bulk Bulk Tape & Reel (TR) Tape & Reel (TR)
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta) 13A (Ta) 13A (Ta) 12.5A (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 9.3mOhm @ 13A, 10V 9mOhm @ 13A, 10V 9mOhm @ 13A, 10V 9.5mOhm @ 12.5A, 10V
Fèt tip P-Channel P-Channel P-Channel N-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Pòtay Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 94 nC @ 10 V 94 nC @ 10 V 23 nC @ 5 V
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 3845 pF @ 15 V 3803 pF @ 15 V 3803 pF @ 15 V 1620 pF @ 15 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDS6679AZ

Fairchild Semiconductor
32D-FDS6679AZ

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