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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQP11N50CF
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQP11N50CF - Fairchild Semiconductor

Manifakti Nimewo Pati
FQP11N50CF
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FQP11N50CF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 11A TO220-3
Deskripsyon detaye
Pake
TO-220-3
Done fèy
FQP11N50CF.pdf
Nan stok: 16427

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Espesifikasyon

Espesifikasyon FQP11N50CF Tech
Fairchild Semiconductor - FQP11N50CF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FQP11N50CF

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri FRFET®  
Rds Sou (Max) @ Id, Vgs 550mOhm @ 5.5A, 10V  
Dissipasyon pouvwa (Max) 195W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2055 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 55 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FQP11N50CF.

Pwodwi atribi FQP11N50CF FQP11N40C FQP11P06 FQP12N60
Nimewo Pati FQP11N50CF FQP11N40C FQP11P06 FQP12N60
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Dissipasyon pouvwa (Max) 195W (Tc) 135W (Tc) 53W (Tc) 180W (Tc)
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Rds Sou (Max) @ Id, Vgs 550mOhm @ 5.5A, 10V 530mOhm @ 5.25A, 10V 175mOhm @ 5.7A, 10V 700mOhm @ 5.3A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Tc) 10.5A (Tc) 11.4A (Tc) 10.5A (Tc)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Drenaj Sous Voltage (Vdss) 500 V 400 V 60 V 600 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Kapasite Antre (Ciss) (Max) @ Vds 2055 pF @ 25 V 1090 pF @ 25 V 550 pF @ 25 V 1900 pF @ 25 V
Fèt tip N-Channel N-Channel P-Channel N-Channel
Vgs (Max) ±30V ±30V ±25V ±30V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 35 nC @ 10 V 17 nC @ 10 V 54 nC @ 10 V
Seri FRFET® QFET® QFET® QFET®
FET Feature - - - -
Pakèt Tube Tube Bulk Tube
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220-3 TO-220-3

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Sètifikasyon & Manm

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Fairchild Semiconductor

FQP11N50CF

Fairchild Semiconductor
32D-FQP11N50CF

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