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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQP3P50
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQP3P50 - Fairchild Semiconductor

Manifakti Nimewo Pati
FQP3P50
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FQP3P50
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR, 2
Deskripsyon detaye
Pake
TO-220-3
Done fèy
FQP3P50.pdf
Nan stok: 4890

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FQP3P50 Tech
Fairchild Semiconductor - FQP3P50 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FQP3P50

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 4.9Ohm @ 1.35A, 10V  
Dissipasyon pouvwa (Max) 85W (Tc)  
Pake / Ka TO-220-3  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 660 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 23 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.7A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FQP3P50.

Pwodwi atribi FQP3P50 FQP3N80C FQP3N90 FQP44N08
Nimewo Pati FQP3P50 FQP3N80C FQP3N90 FQP44N08
Manifakti Fairchild Semiconductor onsemi onsemi onsemi
Seri QFET® QFET® QFET® QFET®
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Pakèt Bulk Tube Tube Tube
Fèt tip P-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 660 pF @ 25 V 705 pF @ 25 V 910 pF @ 25 V 1430 pF @ 25 V
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220-3 TO-220-3
Kouran - Kontini Drain (Id) @ 25 ° C 2.7A (Tc) 3A (Tc) 3.6A (Tc) 44A (Tc)
Drenaj Sous Voltage (Vdss) 500 V 800 V 900 V 80 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30V ±30V ±30V ±25V
Dissipasyon pouvwa (Max) 85W (Tc) 107W (Tc) 130W (Tc) 127W (Tc)
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Rds Sou (Max) @ Id, Vgs 4.9Ohm @ 1.35A, 10V 4.8Ohm @ 1.5A, 10V 4.25Ohm @ 1.8A, 10V 34mOhm @ 22A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 16.5 nC @ 10 V 26 nC @ 10 V 50 nC @ 10 V

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Sètifikasyon & Manm

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Fairchild Semiconductor

FQP3P50

Fairchild Semiconductor
32D-FQP3P50

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