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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFQPF4N80
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FQPF4N80 - Fairchild Semiconductor

Manifakti Nimewo Pati
FQPF4N80
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FQPF4N80
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 2.2A TO220F
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
FQPF4N80.pdf
RoHs Status
Nan stok: 44670

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FQPF4N80 Tech
Fairchild Semiconductor - FQPF4N80 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FQPF4N80

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220F-3  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 3.6Ohm @ 1.1A, 10V  
Dissipasyon pouvwa (Max) 43W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 880 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FQPF4N80.

Pwodwi atribi FQPF4N80 FQPF4N60 FQPF4N90 FQPF4N60
Nimewo Pati FQPF4N80 FQPF4N60 FQPF4N90 FQPF4N60
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Dissipasyon pouvwa (Max) 43W (Tc) 36W (Tc) 47W (Tc) 36W (Tc)
Pakèt Tube Tube Tube Tube
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 20 nC @ 10 V 30 nC @ 10 V 20 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tc) 2.6A (Tc) 2.5A (Tc) 2.6A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±30V ±30V ±30V ±30V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 800 V 600 V 900 V 600 V
Founisè Aparèy pake TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Kapasite Antre (Ciss) (Max) @ Vds 880 pF @ 25 V 670 pF @ 25 V 1100 pF @ 25 V 670 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 3.6Ohm @ 1.1A, 10V 2.2Ohm @ 1.3A, 10V 3.3Ohm @ 1.25A, 10V 2.2Ohm @ 1.3A, 10V
Seri QFET® QFET® QFET® QFET®
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FQPF4N80

Fairchild Semiconductor
32D-FQPF4N80

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