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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleHGT1S12N60C3DS
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HGT1S12N60C3DS - Fairchild Semiconductor

Manifakti Nimewo Pati
HGT1S12N60C3DS
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-HGT1S12N60C3DS
ECAD modèl
Pati Deskripsyon
IGBT, 24A, 600V, N-CHANNEL
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
HGT1S12N60C3DS.pdf
Nan stok: 16084

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon HGT1S12N60C3DS Tech
Fairchild Semiconductor - HGT1S12N60C3DS espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - HGT1S12N60C3DS

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.2V @ 15V, 15A  
Kondisyon tès -  
Td (sou / sou) @ 25 ° C -  
Oblije chanje enèji -  
Founisè Aparèy pake TO-263AB  
Seri -  
Tan rekiperasyon ranvèse (trr) 32 ns  
Pouvwa - Max 104 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Bulk  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 71 nC  
Kouran - Pèseptè Pulsed (Icm) 96 A  
Kouran - Pèseptè (Ic) (Max) 24 A  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor HGT1S12N60C3DS.

Pwodwi atribi HGT1S12N60C3DS HGT1S20N36G3VLS HGT1S12N60A4DS HGT1S12N60B3S
Nimewo Pati HGT1S12N60C3DS HGT1S20N36G3VLS HGT1S12N60A4DS HGT1S12N60B3S
Manifakti Fairchild Semiconductor Fairchild Semiconductor onsemi Harris Corporation
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Voltage - Pèseptè Emitter pann (Max) 600 V 415 V 600 V 600 V
Seri - - - -
Founisè Aparèy pake TO-263AB TO-263AB D²PAK (TO-263) D2PAK (TO-263)
Gate Charge 71 nC 28.7 nC 78 nC 68 nC
Pakèt Bulk Bulk Tube Bulk
Kondisyon tès - 300V, 10A, 25Ohm, 5V 390V, 12A, 10Ohm, 15V 480V, 12A, 25Ohm, 15V
Kalite Antre Standard Logic Standard Standard
Vce (sou) (Max) @ Vge, Ic 2.2V @ 15V, 15A 1.9V @ 5V, 20A 2.7V @ 15V, 12A 2.1V @ 15V, 12A
Oblije chanje enèji - - 55µJ (on), 50µJ (off) 304µJ (on), 250µJ (off)
Tan rekiperasyon ranvèse (trr) 32 ns - 30 ns -
Pouvwa - Max 104 W 150 W 167 W 104 W
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kouran - Pèseptè (Ic) (Max) 24 A 37.7 A 54 A 27 A
Td (sou / sou) @ 25 ° C - -/15µs 17ns/96ns 26ns/150ns
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
IGBT Kalite - - - -
Kouran - Pèseptè Pulsed (Icm) 96 A - 96 A 110 A

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

HGT1S12N60C3DS

Fairchild Semiconductor
32D-HGT1S12N60C3DS

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