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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleHGTD7N60C3S9A
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

HGTD7N60C3S9A - Fairchild Semiconductor

Manifakti Nimewo Pati
HGTD7N60C3S9A
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-HGTD7N60C3S9A
ECAD modèl
Pati Deskripsyon
INSULATED GATE BIPOLAR TRANSISTO
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
HGTD7N60C3S9A.pdf
Sètifikasyon nou an
Nan stok: 34851

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon HGTD7N60C3S9A Tech
Fairchild Semiconductor - HGTD7N60C3S9A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - HGTD7N60C3S9A

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2V @ 15V, 7A  
Kondisyon tès -  
Td (sou / sou) @ 25 ° C -  
Oblije chanje enèji 165µJ (on), 600µJ (off)  
Founisè Aparèy pake TO-252, (D-Pak)  
Seri -  
Pouvwa - Max 60 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Bulk  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 23 nC  
Kouran - Pèseptè Pulsed (Icm) 56 A  
Kouran - Pèseptè (Ic) (Max) 14 A  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor HGTD7N60C3S9A.

Pwodwi atribi HGTD7N60C3S9A HGT1S7N60C3DS9A HGTG12N60A4 HGTG11N120CN
Nimewo Pati HGTD7N60C3S9A HGT1S7N60C3DS9A HGTG12N60A4 HGTG11N120CN
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Kouran - Pèseptè (Ic) (Max) 14 A 14 A 54 A 43 A
Td (sou / sou) @ 25 ° C - - 17ns/96ns 23ns/180ns
Gate Charge 23 nC 23 nC 78 nC 100 nC
Oblije chanje enèji 165µJ (on), 600µJ (off) 165µJ (on), 600µJ (off) 55µJ (on), 50µJ (off) 400µJ (on), 1.3mJ (off)
Seri - - - -
Operating Tanperati -40°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kalite Antre Standard Standard Standard Standard
IGBT Kalite - - - NPT
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 600 V 1200 V
Pouvwa - Max 60 W 60 W 167 W 298 W
Pakèt Bulk Tape & Reel (TR) Tube Tube
Kouran - Pèseptè Pulsed (Icm) 56 A 56 A 96 A 80 A
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3 TO-247-3
Vce (sou) (Max) @ Vge, Ic 2V @ 15V, 7A 2V @ 15V, 7A 2.7V @ 15V, 12A 2.4V @ 15V, 11A
Founisè Aparèy pake TO-252, (D-Pak) D²PAK (TO-263) TO-247 TO-247
Kondisyon tès - 480V, 7A, 50Ohm, 15V 390V, 12A, 10Ohm, 15V 960V, 11A, 10Ohm, 15V
Mounting Kalite Surface Mount Surface Mount Through Hole Through Hole

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

HGTD7N60C3S9A

Fairchild Semiconductor
32D-HGTD7N60C3S9A

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