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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleHUF76121D3ST
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HUF76121D3ST - Fairchild Semiconductor

Manifakti Nimewo Pati
HUF76121D3ST
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-HUF76121D3ST
ECAD modèl
Pati Deskripsyon
N-CHANNEL POWER MOSFET
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
HUF76121D3ST.pdf
RoHs Status
Nan stok: 90170

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon HUF76121D3ST Tech
Fairchild Semiconductor - HUF76121D3ST espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - HUF76121D3ST

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252-3 (DPAK)  
Seri -  
Rds Sou (Max) @ Id, Vgs 23mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 75W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 850 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 30 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor HUF76121D3ST.

Pwodwi atribi HUF76121D3ST HUF76121P3 HUF76113SK8 HUF76121D3S
Nimewo Pati HUF76121D3ST HUF76121P3 HUF76113SK8 HUF76121D3S
Manifakti Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 75W (Tc) 75W (Tc) 2.5W (Ta) 75W (Tc)
Founisè Aparèy pake TO-252-3 (DPAK) TO-220AB US8 TO-252-3 (DPAK)
Pakèt Bulk Bulk Bulk Bulk
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Operating Tanperati -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds Sou (Max) @ Id, Vgs 23mOhm @ 20A, 10V 21mOhm @ 47A, 10V 30mOhm @ 6.5A, 10V 23mOhm @ 20A, 10V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 8-VFSOP (0.091", 2.30mm Width) TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V 21 nC @ 10 V 30 nC @ 10 V
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc) 47A (Tc) 6.5A (Ta) 20A (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Seri - UltraFET™ UltraFET™ -
Kapasite Antre (Ciss) (Max) @ Vds 850 pF @ 25 V 850 pF @ 25 V 585 pF @ 25 V 850 pF @ 25 V
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

HUF76121D3ST

Fairchild Semiconductor
32D-HUF76121D3ST

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