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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleHUFA75617D3S
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HUFA75617D3S - Fairchild Semiconductor

Manifakti Nimewo Pati
HUFA75617D3S
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-HUFA75617D3S
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 16A TO252AA
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
HUFA75617D3S.pdf
RoHs Status
Nan stok: 4800

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon HUFA75617D3S Tech
Fairchild Semiconductor - HUFA75617D3S espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - HUFA75617D3S

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252, (D-Pak)  
Seri UltraFET™  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 16A, 10V  
Dissipasyon pouvwa (Max) 64W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 570 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 39 nC @ 20 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor HUFA75617D3S.

Pwodwi atribi HUFA75617D3S HUFA75545P3 HUFA75639S3ST HUFA75433S3ST
Nimewo Pati HUFA75617D3S HUFA75545P3 HUFA75639S3ST HUFA75433S3ST
Manifakti Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Dissipasyon pouvwa (Max) 64W (Tc) 270W (Tc) 200W (Tc) 150W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-252, (D-Pak) TO-220-3 D²PAK (TO-263) D2PAK (TO-263)
Kapasite Antre (Ciss) (Max) @ Vds 570 pF @ 25 V 3750 pF @ 25 V 2000 pF @ 25 V 1550 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pòtay Charge (Qg) (Max) @ Vgs 39 nC @ 20 V 235 nC @ 20 V 130 nC @ 10 V 117 nC @ 20 V
Drenaj Sous Voltage (Vdss) 100 V 80 V 100 V 60 V
Seri UltraFET™ UltraFET™ Automotive, AEC-Q101, UltraFET™ UltraFET®
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Pakèt Tube Tube Tape & Reel (TR) Bulk
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 90mOhm @ 16A, 10V 10mOhm @ 75A, 10V 25mOhm @ 56A, 10V 16mOhm @ 64A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc) 75A (Tc) 56A (Tc) 64A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

HUFA75617D3S

Fairchild Semiconductor
32D-HUFA75617D3S

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