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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleHUFA76419D3S
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HUFA76419D3S - Fairchild Semiconductor

Manifakti Nimewo Pati
HUFA76419D3S
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-HUFA76419D3S
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 20A TO252AA
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
HUFA76419D3S.pdf
RoHs Status
Nan stok: 5120

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon HUFA76419D3S Tech
Fairchild Semiconductor - HUFA76419D3S espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - HUFA76419D3S

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252, (D-Pak)  
Seri UltraFET™  
Rds Sou (Max) @ Id, Vgs 37mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 75W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 900 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 27.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor HUFA76419D3S.

Pwodwi atribi HUFA76419D3S HUFA76413P3 HUFA76419S3S HUFA76419D3S
Nimewo Pati HUFA76419D3S HUFA76413P3 HUFA76419S3S HUFA76419D3S
Manifakti Fairchild Semiconductor onsemi onsemi onsemi
Seri UltraFET™ UltraFET™ UltraFET™ UltraFET™
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Pòtay Charge (Qg) (Max) @ Vgs 27.5 nC @ 10 V 20 nC @ 10 V 28 nC @ 10 V 27.5 nC @ 10 V
Pakèt Tube Tube Tube Tube
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc) 23A (Tc) 29A (Tc) 20A (Tc)
Vgs (Max) ±16V ±16V ±16V ±16V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-252, (D-Pak) TO-220-3 D²PAK (TO-263) TO-252AA
FET Feature - - - -
Dissipasyon pouvwa (Max) 75W (Tc) 60W (Tc) 75W (Tc) 75W (Tc)
Rds Sou (Max) @ Id, Vgs 37mOhm @ 20A, 10V 49mOhm @ 23A, 10V 35mOhm @ 29A, 10V 37mOhm @ 20A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Drenaj Sous Voltage (Vdss) 60 V 60 V 60 V 60 V
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 900 pF @ 25 V 645 pF @ 25 V 900 pF @ 25 V 900 pF @ 25 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

HUFA76419D3S

Fairchild Semiconductor
32D-HUFA76419D3S

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