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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF530A
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF530A - Fairchild Semiconductor

Manifakti Nimewo Pati
IRF530A
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-IRF530A
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR, 1
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRF530A.pdf
Nan stok: 79200

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRF530A Tech
Fairchild Semiconductor - IRF530A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - IRF530A

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) -  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 110mOhm @ 7A, 10V  
Dissipasyon pouvwa (Max) 55W (Tc)  
Pake / Ka TO-220-3  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 790 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 36 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor IRF530A.

Pwodwi atribi IRF530A IRF530NSPBF IRF530L IRF5305SPBF
Nimewo Pati IRF530A IRF530NSPBF IRF530L IRF5305SPBF
Manifakti Fairchild Semiconductor International Rectifier Vishay Siliconix Infineon Technologies
Dissipasyon pouvwa (Max) 55W (Tc) 3.8W (Ta), 70W (Tc) - 3.8W (Ta), 110W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 37 nC @ 10 V 26 nC @ 10 V 63 nC @ 10 V
Founisè Aparèy pake TO-220-3 D2PAK TO-262 D2PAK
Vgs (Max) - ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 790 pF @ 25 V 920 pF @ 25 V 670 pF @ 25 V 1200 pF @ 25 V
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc) 17A (Tc) 14A (Tc) 31A (Tc)
Rds Sou (Max) @ Id, Vgs 110mOhm @ 7A, 10V 90mOhm @ 9A, 10V 160mOhm @ 8.4A, 10V 60mOhm @ 16A, 10V
Pakèt Bulk Bulk Tube Tube
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pake / Ka TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Mounting Kalite Through Hole Surface Mount Through Hole Surface Mount
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Seri - HEXFET® - HEXFET®
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 55 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel P-Channel

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Sètifikasyon & Manm

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Fairchild Semiconductor

IRF530A

Fairchild Semiconductor
32D-IRF530A

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