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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayNDH8304P
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NDH8304P - Fairchild Semiconductor

Manifakti Nimewo Pati
NDH8304P
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-NDH8304P
ECAD modèl
Pati Deskripsyon
SMALL SIGNAL P-CHANNEL MOSFET
Deskripsyon detaye
Pake
8-TSOP (0.130", 3.30mm Width)
Done fèy
NDH8304P.pdf
RoHs Status
Nan stok: 54900

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NDH8304P Tech
Fairchild Semiconductor - NDH8304P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - NDH8304P

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 1V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SuperSOT™-8  
Seri -  
Rds Sou (Max) @ Id, Vgs 70mOhm @ 2.7A, 4.5V  
Pouvwa - Max 800mW  
Pake / Ka 8-TSOP (0.130", 3.30mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 865pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 23nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.7A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz NDH8304  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor NDH8304P.

Pwodwi atribi NDH8304P CSD88537ND NDH8304P NDH8502P
Nimewo Pati NDH8304P CSD88537ND NDH8304P NDH8502P
Manifakti Fairchild Semiconductor Texas Instruments onsemi Fairchild Semiconductor
Founisè Aparèy pake SuperSOT™-8 8-SOIC SuperSOT™-8 SuperSOT™-8
Pake / Ka 8-TSOP (0.130", 3.30mm Width) 8-SOIC (0.154", 3.90mm Width) 8-LSOP (0.130", 3.30mm Width) 8-TSOP (0.130", 3.30mm Width)
Pouvwa - Max 800mW 2.1W 800mW 800mW (Ta)
Seri - NexFET™ - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 70mOhm @ 2.7A, 4.5V 15mOhm @ 8A, 10V 70mOhm @ 2.7A, 4.5V 110mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id 1V @ 250µA 3.6V @ 250µA 1V @ 250µA 3V @ 250µA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz NDH8304 CSD88537 NDH8304 NDH8502
Kapasite Antre (Ciss) (Max) @ Vds 865pF @ 10V 1400pF @ 30V 865pF @ 10V 340pF @ 15V
Drenaj Sous Voltage (Vdss) 20V 60V 20V 30V
FET Feature Logic Level Gate - Logic Level Gate -
Konfigirasyon 2 P-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Kouran - Kontini Drain (Id) @ 25 ° C 2.7A 15A 2.7A 2.2A (Ta)
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Bulk
Pòtay Charge (Qg) (Max) @ Vgs 23nC @ 4.5V 18nC @ 10V 23nC @ 4.5V 14.5nC @ 10V

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

NDH8304P

Fairchild Semiconductor
32D-NDH8304P

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