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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI3454DV
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI3454DV - Fairchild Semiconductor

Manifakti Nimewo Pati
SI3454DV
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-SI3454DV
ECAD modèl
Pati Deskripsyon
SMALL SIGNAL N-CHANNEL MOSFET
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
SI3454DV.pdf
RoHs Status
Nan stok: 5470

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI3454DV Tech
Fairchild Semiconductor - SI3454DV espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - SI3454DV

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SuperSOT™-6  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 4.2A, 10V  
Dissipasyon pouvwa (Max) 800mW (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 460 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor SI3454DV.

Pwodwi atribi SI3454DV SI3455ADV-T1-GE3 SI3453DV-T1-GE3 SI3454ADV-T1-E3
Nimewo Pati SI3454DV SI3455ADV-T1-GE3 SI3453DV-T1-GE3 SI3454ADV-T1-E3
Manifakti Fairchild Semiconductor Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kapasite Antre (Ciss) (Max) @ Vds 460 pF @ 15 V - 155 pF @ 15 V -
Seri PowerTrench® TrenchFET® - TrenchFET®
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Founisè Aparèy pake SuperSOT™-6 6-TSOP 6-TSOP 6-TSOP
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 13 nC @ 10 V 6.8 nC @ 10 V 15 nC @ 10 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 65mOhm @ 4.2A, 10V 100mOhm @ 3.5A, 10V 165mOhm @ 2.5A, 10V 60mOhm @ 4.5A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
FET Feature - - - -
Dissipasyon pouvwa (Max) 800mW (Ta) 1.14W (Ta) 3W (Tc) 1.14W (Ta)
Kouran - Kontini Drain (Id) @ 25 ° C 4.2A (Ta) 2.7A (Ta) 3.4A (Tc) 3.4A (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V
Fèt tip N-Channel P-Channel P-Channel N-Channel
Vgs (th) (Max) @ Id 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

SI3454DV

Fairchild Semiconductor
32D-SI3454DV

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