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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayPMDPB28UN,115
PMDPB28UN,115 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PMDPB28UN,115 - NXP USA Inc.

Manifakti Nimewo Pati
PMDPB28UN,115
Manifakti
NXP Semiconductors
Allelco Nimewo Pati
32D-PMDPB28UN,115
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 20V 4.6A HUSON6
Deskripsyon detaye
Pake
6-UDFN Exposed Pad
Done fèy
PMDPB28UN.pdf
RoHs Status
Nan stok: 3700

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon PMDPB28UN,115 Tech
NXP USA Inc. - PMDPB28UN,115 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak NXP USA Inc. - PMDPB28UN,115

Pwodwi atribi Valè atribi  
Manifakti NXP Semiconductors  
Vgs (th) (Max) @ Id 1V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-HUSON (2x2)  
Seri -  
Rds Sou (Max) @ Id, Vgs 37mOhm @ 4.6A, 4.5V  
Pouvwa - Max 510mW  
Pake / Ka 6-UDFN Exposed Pad  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 265pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.6A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz PMDPB  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou NXP USA Inc. PMDPB28UN,115.

Pwodwi atribi PMDPB28UN,115 PMDPB30XN,115 PMDPB56XN,115 PMDPB42UN,115
Nimewo Pati PMDPB28UN,115 PMDPB30XN,115 PMDPB56XN,115 PMDPB42UN,115
Manifakti NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Pòtay Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V 21.7nC @ 4.5V 2.9nC @ 4.5V 3.5nC @ 4.5V
Kouran - Kontini Drain (Id) @ 25 ° C 4.6A 4A 3.1A 3.9A
Seri - - - -
Kapasite Antre (Ciss) (Max) @ Vds 265pF @ 10V 660pF @ 10V 170pF @ 15V 185pF @ 10V
Rds Sou (Max) @ Id, Vgs 37mOhm @ 4.6A, 4.5V 40mOhm @ 3A, 4.5V 73mOhm @ 3.1A, 4.5V 50mOhm @ 3.9A, 4.5V
Nimewo pwodwi baz PMDPB PMDPB30 PMDPB56 PMDPB
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drenaj Sous Voltage (Vdss) 20V 20V 30V 20V
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 1V @ 250µA 900mV @ 250µA 1.5V @ 250µA 1V @ 250µA
Founisè Aparèy pake 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2)
Pouvwa - Max 510mW 490mW 510mW 510mW
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka 6-UDFN Exposed Pad 6-UFDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

PMDPB28UN,115 fich PDF

Download PMDPB28UN,115 PDF fich ak dokiman NXP USA Inc. pou PMDPB28UN,115 - NXP USA Inc..

PCN anbalaj
All Dev Label Update 15/Dec/2020.pdf
Enfòmasyon sou anviwònman an
NXP USA Inc REACH.pdf NXP USA Inc RoHS Cert.pdf
PCN obsolescence/ eol
MCU Dip Supply Situation 12/May/2015.pdf Multiple Devices 01/Jul/2014.pdf
Fich
PMDPB28UN.pdf

Shipment

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Sètifikasyon & Manm

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PMDPB28UN,115 Image

PMDPB28UN,115

NXP USA Inc.
32D-PMDPB28UN,115

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