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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SinglePMR280UN,115
NXP USA Inc.
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PMR280UN,115 - NXP USA Inc.

Manifakti Nimewo Pati
PMR280UN,115
Manifakti
NXP Semiconductors
Allelco Nimewo Pati
32D-PMR280UN,115
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 980MA SC75
Deskripsyon detaye
Pake
SC-75, SOT-416
Done fèy
PMR280UN.pdf
RoHs Status
Nan stok: 5180

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon PMR280UN,115 Tech
NXP USA Inc. - PMR280UN,115 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak NXP USA Inc. - PMR280UN,115

Pwodwi atribi Valè atribi  
Manifakti NXP Semiconductors  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-75  
Seri TrenchMOS™  
Rds Sou (Max) @ Id, Vgs 340mOhm @ 200mA, 4.5V  
Dissipasyon pouvwa (Max) 530mW (Tc)  
Pake / Ka SC-75, SOT-416  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 45 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 0.89 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 980mA (Tc)  
Nimewo pwodwi baz PMR2  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou NXP USA Inc. PMR280UN,115.

Pwodwi atribi PMR280UN,115 PMR290UNE,115 PMR290XN,115 PMR400UN,115
Nimewo Pati PMR280UN,115 PMR290UNE,115 PMR290XN,115 PMR400UN,115
Manifakti NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Vgs (th) (Max) @ Id 1V @ 250µA 950mV @ 250µA 1.5V @ 250µA 1V @ 250µA
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 30 V
Seri TrenchMOS™ - TrenchMOS™ TrenchMOS™
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz PMR2 PMR2 PMR2 PMR4
Pake / Ka SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 45 pF @ 20 V 83 pF @ 10 V 34 pF @ 20 V 43 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 340mOhm @ 200mA, 4.5V 380mOhm @ 500mA, 4.5V 350mOhm @ 200mA, 4.5V 480mOhm @ 200mA, 4.5V
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 0.89 nC @ 4.5 V 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V 0.89 nC @ 4.5 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 530mW (Tc) 250mW (Ta), 770mW (Tc) 530mW (Tc) 530mW (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 980mA (Tc) 700mA (Ta) 970mA (Tc) 800mA (Tc)
Vgs (Max) ±8V ±8V ±12V ±8V
Founisè Aparèy pake SC-75 SC-75 SC-75 SC-75
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V 1.8V, 4.5V

PMR280UN,115 fich PDF

Download PMR280UN,115 PDF fich ak dokiman NXP USA Inc. pou PMR280UN,115 - NXP USA Inc..

PCN anbalaj
All Dev Label Update 15/Dec/2020.pdf
Enfòmasyon sou anviwònman an
NXP USA Inc REACH.pdf NXP USA Inc RoHS Cert.pdf
PCN obsolescence/ eol
Advance Notice SOT416 Devices 02/Sep/2014.pdf MCU Dip Supply Situation 12/May/2015.pdf Multiple Devices 01/Jul/2014.pdf
Fich
PMR280UN.pdf

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Sètifikasyon & Manm

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NXP USA Inc.

PMR280UN,115

NXP USA Inc.
32D-PMR280UN,115

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