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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SinglePSMN3R9-60XSQ
PSMN3R9-60XSQ Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PSMN3R9-60XSQ - NXP Semiconductors / Freescale

Manifakti Nimewo Pati
PSMN3R9-60XSQ
Manifakti
NXP Semiconductors
Allelco Nimewo Pati
32D-PSMN3R9-60XSQ
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 75A TO-220F
Deskripsyon detaye
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
PSMN3R9-60XSQ.pdf
RoHs Status
Plon gratis / RoHS konfòme
Nan stok: 5310

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon PSMN3R9-60XSQ Tech
NXP Semiconductors / Freescale - PSMN3R9-60XSQ espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak NXP Semiconductors / Freescale - PSMN3R9-60XSQ

Pwodwi atribi Valè atribi  
Manifakti NXP Semiconductors  
Vgs (th) (Max) @ Id 4V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220F  
Seri -  
Rds Sou (Max) @ Id, Vgs 4 mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) 55W (Tc)  
Anbalaj Tube  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Lòt non yo 568-11430-5
934068135127
PSMN3R9-60XSQ-ND
 
Operating Tanperati -55°C ~ 175°C (TJ)  
Pwodwi atribi Valè atribi  
Mounting Kalite Through Hole  
Imidite sansiblite Nivo (MSL) 1 (Unlimited)  
Plon gratis Status / RoHS Status Lead free / RoHS Compliant  
Kapasite Antre (Ciss) (Max) @ Vds 5494pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 103nC @ 10V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60V  
Detaye Deskripsyon N-Channel 60V 75A (Tc) 55W (Tc) Through Hole TO-220F  
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou NXP Semiconductors / Freescale PSMN3R9-60XSQ.

Pwodwi atribi PSMN3R9-60XSQ PSMN3R9-60PSQ PSMN4R0-30YLDX PSMN3R9-60PSQ
Nimewo Pati PSMN3R9-60XSQ PSMN3R9-60PSQ PSMN4R0-30YLDX PSMN3R9-60PSQ
Manifakti NXP Semiconductors / Freescale Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Drenaj Sous Voltage (Vdss) 60V 60 V 30 V 60 V
Lòt non yo 568-11430-5
934068135127
PSMN3R9-60XSQ-ND
- - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 4.5V, 10V 10V
Founisè Aparèy pake TO-220F TO-220AB LFPAK56, Power-SO8 TO-220AB
Pòtay Charge (Qg) (Max) @ Vgs 103nC @ 10V 103 nC @ 10 V 19.4 nC @ 10 V 103 nC @ 10 V
Pake / Ka TO-220-3 Full Pack, Isolated Tab TO-220-3 SC-100, SOT-669 TO-220-3
Anbalaj Tube - - -
Detaye Deskripsyon N-Channel 60V 75A (Tc) 55W (Tc) Through Hole TO-220F - - -
Plon gratis Status / RoHS Status Lead free / RoHS Compliant - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 5494pF @ 25V 5600 pF @ 25 V 1272 pF @ 15 V 5600 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc) 130A (Tc) 95A (Tc) 130A (Tc)
Vgs (th) (Max) @ Id 4V @ 1mA 4V @ 1mA 2.2V @ 1mA 4V @ 1mA
Vgs (Max) ±20V ±20V ±20V ±20V
FET Feature - - - -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 55W (Tc) 263W (Tc) 64W (Tc) 263W (Tc)
Imidite sansiblite Nivo (MSL) 1 (Unlimited) - - -
Seri - - TrenchMOS™ -
Mounting Kalite Through Hole Through Hole Surface Mount Through Hole
Rds Sou (Max) @ Id, Vgs 4 mOhm @ 25A, 10V 3.9mOhm @ 25A, 10V 4mOhm @ 25A, 10V 3.9mOhm @ 25A, 10V

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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PSMN3R9-60XSQ Image

PSMN3R9-60XSQ

NXP Semiconductors / Freescale
32D-PSMN3R9-60XSQ

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