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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single1N3890R
GeneSiC Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

1N3890R - GeneSiC Semiconductor

Manifakti Nimewo Pati
1N3890R
Manifakti
GeneSiC Semiconductor
Allelco Nimewo Pati
32D-1N3890R
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP REV 100V 12A DO4
Deskripsyon detaye
Pake
DO-203AA, DO-4, Stud
Done fèy
1N3889 thru 1N3893R.pdf
RoHs Status
RoHS konfòme
Nan stok: 6024

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 1N3890R Tech
GeneSiC Semiconductor - 1N3890R espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak GeneSiC Semiconductor - 1N3890R

Pwodwi atribi Valè atribi  
Manifakti GeneSiC Semiconductor  
Voltage - Forward (Vf) (Max) @ Si 1.4 V @ 12 A  
Voltage - DC ranvèse (Vr) (Max) 100 V  
Teknoloji Standard, Reverse Polarity  
Founisè Aparèy pake DO-4  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 200 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-203AA, DO-4, Stud  
Pakèt Bulk  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Chassis, Stud Mount  
Kouran - Reverse Leakage @ Vr 25 µA @ 50 V  
Kouran - Mwayèn Rectified (Io) 12A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 1N3890R  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou GeneSiC Semiconductor 1N3890R.

Pwodwi atribi 1N3890R 1N3891A 1N3890A 1N3890R
Nimewo Pati 1N3890R 1N3891A 1N3890A 1N3890R
Manifakti GeneSiC Semiconductor Microchip Technology Microchip Technology Microchip Technology
Mounting Kalite Chassis, Stud Mount Stud Mount Stud Mount Stud Mount
Kouran - Mwayèn Rectified (Io) 12A 20A 20A 12A
Founisè Aparèy pake DO-4 DO-203AA (DO-4) DO-203AA (DO-4) DO-203AA (DO-4)
Pakèt Bulk Bulk Bulk Bulk
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kapasite @ Vr, F - - - 115pF @ 10V, 1MHz
Nimewo pwodwi baz 1N3890R 1N3891 1N3890 -
Voltage - Forward (Vf) (Max) @ Si 1.4 V @ 12 A 1.5 V @ 38 A 1.5 V @ 38 A 1.5 V @ 20 A
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Teknoloji Standard, Reverse Polarity Standard Standard Standard
Kouran - Reverse Leakage @ Vr 25 µA @ 50 V 10 µA @ 200 V 10 µA @ 100 V 25 µA @ 50 V
Pake / Ka DO-203AA, DO-4, Stud DO-203AA, DO-4, Stud DO-203AA, DO-4, Stud DO-203AA, DO-4, Stud
Seri - Military, MIL-PRF-19500/304 Military, MIL-PRF-19500/304 Military, MIL-PRF-19500/304
Tan rekiperasyon ranvèse (trr) 200 ns 150 ns 150 ns 150 ns
Voltage - DC ranvèse (Vr) (Max) 100 V 200 V 100 V 100 V

1N3890R fich PDF

Download 1N3890R PDF fich ak dokiman GeneSiC Semiconductor pou 1N3890R - GeneSiC Semiconductor.

Fich
1N3889 thru 1N3893R.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
GeneSiC Semiconductor

1N3890R

GeneSiC Semiconductor
32D-1N3890R

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