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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurGBJ25M
GeneSiC Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

GBJ25M - GeneSiC Semiconductor

Manifakti Nimewo Pati
GBJ25M
Manifakti
GeneSiC Semiconductor
Allelco Nimewo Pati
32D-GBJ25M
ECAD modèl
Pati Deskripsyon
1000V 25A GBJ SINGLE PHASE BRIDG
Deskripsyon detaye
Pake
4-SIP, GBJ
Done fèy
GBJ25J thru GBJ25M.pdf
Nan stok: 28950

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon GBJ25M Tech
GeneSiC Semiconductor - GBJ25M espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak GeneSiC Semiconductor - GBJ25M

Pwodwi atribi Valè atribi  
Manifakti GeneSiC Semiconductor  
Voltage - Peak Ranvèse (Max) 1 kV  
Voltage - Forward (Vf) (Max) @ Si 1.05 V @ 12.5 A  
Teknoloji Standard  
Founisè Aparèy pake GBJ  
Seri -  
Pake / Ka 4-SIP, GBJ  
Pwodwi atribi Valè atribi  
Pakèt Bulk  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 10 µA @ 1000 V  
Kouran - Mwayèn Rectified (Io) 25 A  
Nimewo pwodwi baz GBJ25  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou GeneSiC Semiconductor GBJ25M.

Pwodwi atribi GBJ25M GBJ25L06 GBJ25J GBJ3510
Nimewo Pati GBJ25M GBJ25L06 GBJ25J GBJ3510
Manifakti GeneSiC Semiconductor Diodes Incorporated SURGE Yangzhou Yangjie Electronic Technology Co.,Ltd
Kouran - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 600 V 5 µA @ 600 V 5 µA @ 1000 V
Kalite dyod Single Phase Single Phase Single Phase Single Phase
Operating Tanperati -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Mwayèn Rectified (Io) 25 A 25 A 3.5 A 35 A
Founisè Aparèy pake GBJ GBJ GBJ(5S) GBJ
Nimewo pwodwi baz GBJ25 - - -
Pakèt Bulk - Bag Box
Voltage - Forward (Vf) (Max) @ Si 1.05 V @ 12.5 A 0.92 V @ 12.5 A 1 V @ 12.5 A 1.05 V @ 17.5 A
Seri - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Voltage - Peak Ranvèse (Max) 1 kV 600 V 600 V 1 kV
Teknoloji Standard Standard Standard Standard
Pake / Ka 4-SIP, GBJ 4-SIP, GBJ 4-SIP, KBJ 4-SIP, GBJ

GBJ25M fich PDF

Download GBJ25M PDF fich ak dokiman GeneSiC Semiconductor pou GBJ25M - GeneSiC Semiconductor.

Fich
GBJ25J thru GBJ25M.pdf

Shipment

Tan livrezon

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Pri livrezon

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(Diferan tan ki defini / peyi / gwosè pake gen pri diferan.)

Metòd livrezon

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Peyi komen referans tan lojistik
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Lazi Peyi pwovizwa 4
Japon 4
Mwayennorian Pèp Izrayèl la 6
DHL & FedEx Shipment Chaj Referans
Chajman chaj (kg) Referans DHL (USD $)
0.00kg-1.00kg USD $ 30.00 - USD $ 60.00
1.00kg-2.00kg USD $ 40.00 - USD $ 80.00
2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
Remak:
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
GeneSiC Semiconductor

GBJ25M

GeneSiC Semiconductor
32D-GBJ25M

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