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KayPwodwi yoSikit entegre Integrated (ICs)MemwaGD25WQ32ESIGR
GigaDevice Semiconductor (HK) Limited
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

GD25WQ32ESIGR - GigaDevice Semiconductor (HK) Limited

Manifakti Nimewo Pati
GD25WQ32ESIGR
Manifakti
GigaDevice
Allelco Nimewo Pati
32D-GD25WQ32ESIGR
ECAD modèl
Pati Deskripsyon
32MBIT, 1.65V-3.6V, SOP8 208MIL,
Deskripsyon detaye
Pake
8-SOIC (0.209", 5.30mm Width)
Done fèy
Product Selection Guide 2023.pdf
RoHs Status
Nan stok: 52360

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon GD25WQ32ESIGR Tech
GigaDevice Semiconductor (HK) Limited - GD25WQ32ESIGR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak GigaDevice Semiconductor (HK) Limited - GD25WQ32ESIGR

Pwodwi atribi Valè atribi  
Manifakti GigaDevice  
Ekri Tan sik - Pawòl, Paj 120µs, 4ms  
Voltage - Pwovizyon pou 1.65V ~ 3.6V  
Teknoloji FLASH - NOR (SLC)  
Founisè Aparèy pake 8-SOP  
Seri -  
Pake / Ka 8-SOIC (0.209", 5.30mm Width)  
Pakèt Tape & Reel (TR)  
Operating Tanperati -40°C ~ 85°C (TA)  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Kalite memwa Non-Volatile  
Memwa gwosè 32Mbit  
Òganizasyon memwa 4M x 8  
Memwa entèfas SPI - Quad I/O  
Fòma memwa FLASH  
Clock Frekans 104 MHz  
Tan Aksè 8 ns  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou GigaDevice Semiconductor (HK) Limited GD25WQ32ESIGR.

Pwodwi atribi GD25WQ32ESIGR GD25WD20CTIG GD25WD80CEIGR GD25WD40CEIGR
Nimewo Pati GD25WQ32ESIGR GD25WD20CTIG GD25WD80CEIGR GD25WD40CEIGR
Manifakti GigaDevice Semiconductor (HK) Limited GigaDevice Semiconductor (HK) Limited GigaDevice Semiconductor (HK) Limited GigaDevice Semiconductor (HK) Limited
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Òganizasyon memwa 4M x 8 256K x 8 1M x 8 512K x 8
Seri - - - -
Founisè Aparèy pake 8-SOP 8-SOP 8-USON (2x3) 8-USON (2x3)
Fòma memwa FLASH FLASH FLASH FLASH
Clock Frekans 104 MHz - - -
Ekri Tan sik - Pawòl, Paj 120µs, 4ms - - -
Voltage - Pwovizyon pou 1.65V ~ 3.6V 1.65V ~ 3.6V 1.65V ~ 3.6V 1.65V ~ 3.6V
Memwa gwosè 32Mbit 2Mbit 8Mbit 4Mbit
Pake / Ka 8-SOIC (0.209", 5.30mm Width) 8-SOIC (0.154", 3.90mm Width) 8-XFDFN Exposed Pad 8-XFDFN Exposed Pad
Tan Aksè 8 ns - - -
Memwa entèfas SPI - Quad I/O SPI - Quad I/O SPI - Quad I/O SPI - Quad I/O
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Kalite memwa Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Teknoloji FLASH - NOR (SLC) FLASH - NOR FLASH - NOR FLASH - NOR

GD25WQ32ESIGR fich PDF

Download GD25WQ32ESIGR PDF fich ak dokiman GigaDevice Semiconductor (HK) Limited pou GD25WQ32ESIGR - GigaDevice Semiconductor (HK) Limited.

Fich
Product Selection Guide 2023.pdf

Shipment

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Sètifikasyon & Manm

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GigaDevice Semiconductor (HK) Limited

GD25WQ32ESIGR

GigaDevice Semiconductor (HK) Limited
32D-GD25WQ32ESIGR

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