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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF442
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF442 - Harris Corporation

Manifakti Nimewo Pati
IRF442
Manifakti
Harris Corporation
Allelco Nimewo Pati
32D-IRF442
ECAD modèl
Pati Deskripsyon
N-CHANNEL POWER MOSFET
Deskripsyon detaye
Pake
TO-204AA, TO-3
Done fèy
IRF442.pdf
Nan stok: 4960

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF442 Tech
Harris Corporation - IRF442 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Harris Corporation - IRF442

Pwodwi atribi Valè atribi  
Manifakti Harris Corporation  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 1.1Ohm @ 4.4A, 10V  
Dissipasyon pouvwa (Max) 125W (Tc)  
Pake / Ka TO-204AA, TO-3  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1225 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 63 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Harris Corporation IRF442.

Pwodwi atribi IRF442 IRF4104SPBF IRF450 IRF433
Nimewo Pati IRF442 IRF4104SPBF IRF450 IRF433
Manifakti Harris Corporation Infineon Technologies Infineon Technologies Harris Corporation
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Pòtay Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 100 nC @ 10 V 120 nC @ 10 V -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±20V ±20V -
Pakèt Bulk Tube Tube Bulk
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 1.1Ohm @ 4.4A, 10V 5.5mOhm @ 75A, 10V 500mOhm @ 12A, 10V -
Kapasite Antre (Ciss) (Max) @ Vds 1225 pF @ 25 V 3000 pF @ 25 V 2700 pF @ 25 V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Founisè Aparèy pake TO-3 D2PAK TO-204AA (TO-3) TO-3
Pake / Ka TO-204AA, TO-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-204AA, TO-3 TO-204AA
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA -
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Drenaj Sous Voltage (Vdss) 500 V 40 V 500 V 450 V
Seri - HEXFET® HEXFET® -
Dissipasyon pouvwa (Max) 125W (Tc) 140W (Tc) 150W (Tc) 75W
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Tc) 75A (Tc) 12A (Tc) 4A

Shipment

Tan livrezon

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Metòd livrezon

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Kontakte nou si ou gen nenpòt kesyon.

  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis

IRF442

Harris Corporation
32D-IRF442

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