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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayGWM160-0055P3
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

GWM160-0055P3 - IXYS

Manifakti Nimewo Pati
GWM160-0055P3
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-GWM160-0055P3
ECAD modèl
Pati Deskripsyon
MOSFET 6N-CH 55V 160A ISODIL
Deskripsyon detaye
Pake
17-SMD, Flat Leads
Done fèy
GWM160-0055P3.pdf
Nan stok: 5040

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Kantite

Espesifikasyon

Espesifikasyon GWM160-0055P3 Tech
IXYS - GWM160-0055P3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - GWM160-0055P3

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 4V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ISOPLUS-DIL™  
Seri -  
Rds Sou (Max) @ Id, Vgs 3mOhm @ 100A, 10V  
Pouvwa - Max -  
Pake / Ka 17-SMD, Flat Leads  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 90nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 55V  
Kouran - Kontini Drain (Id) @ 25 ° C 160A  
Konfigirasyon 6 N-Channel (3-Phase Bridge)  
Nimewo pwodwi baz GWM160  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS GWM160-0055P3.

Pwodwi atribi GWM160-0055P3 DMHC3025LSD-13 NTHD4508NT1G SSD2025TF
Nimewo Pati GWM160-0055P3 DMHC3025LSD-13 NTHD4508NT1G SSD2025TF
Manifakti IXYS Diodes Incorporated onsemi onsemi
Founisè Aparèy pake ISOPLUS-DIL™ 8-SO ChipFET™ 8-SOIC
FET Feature - Logic Level Gate Logic Level Gate Logic Level Gate
Rds Sou (Max) @ Id, Vgs 3mOhm @ 100A, 10V 25mOhm @ 5A, 10V 75mOhm @ 3.1A, 4.5V 100mOhm @ 3.3A, 10V
Kapasite Antre (Ciss) (Max) @ Vds - 590pF @ 15V 180pF @ 10V -
Seri - - - -
Vgs (th) (Max) @ Id 4V @ 1mA 2V @ 250µA 1.2V @ 250µA 1V @ 250µA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pouvwa - Max - 1.5W 1.13W 2W
Nimewo pwodwi baz GWM160 DMHC3025 NTHD4508 SSD2025
Pòtay Charge (Qg) (Max) @ Vgs 90nC @ 10V 11.7nC @ 10V 4nC @ 4.5V 30nC @ 10V
Kouran - Kontini Drain (Id) @ 25 ° C 160A 6A, 4.2A 3A 3.3A
Konfigirasyon 6 N-Channel (3-Phase Bridge) 2 N and 2 P-Channel (Half Bridge) 2 N-Channel (Dual) 2 N-Channel (Dual)
Drenaj Sous Voltage (Vdss) 55V 30V 20V 60V
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka 17-SMD, Flat Leads 8-SOIC (0.154", 3.90mm Width) 8-SMD, Flat Lead 8-SOIC (0.154", 3.90mm Width)

GWM160-0055P3 fich PDF

Download GWM160-0055P3 PDF fich ak dokiman IXYS pou GWM160-0055P3 - IXYS.

Fich
GWM160-0055P3.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
IXYS

GWM160-0055P3

IXYS
32D-GWM160-0055P3

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