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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXFA5N100P
IXFA5N100P Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXFA5N100P - IXYS

Manifakti Nimewo Pati
IXFA5N100P
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXFA5N100P
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 1000V 5A TO263
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IXF(A,H,P)5N100P.pdf
RoHs Status
Nan stok: 11254

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Espesifikasyon

Espesifikasyon IXFA5N100P Tech
IXYS - IXFA5N100P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXFA5N100P

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 6V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-263AA (IXFA)  
Seri HiPerFET™, Polar  
Rds Sou (Max) @ Id, Vgs 2.8Ohm @ 2.5A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1830 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 1000 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5A (Tc)  
Nimewo pwodwi baz IXFA5N100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXFA5N100P.

Pwodwi atribi IXFA5N100P IXFA7N80P IXFB100N50P IXFA230N075T2
Nimewo Pati IXFA5N100P IXFA7N80P IXFB100N50P IXFA230N075T2
Manifakti IXYS IXYS IXYS IXYS
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Seri HiPerFET™, Polar HiPerFET™, Polar HiPerFET™, Polar HiPerFET™, TrenchT2™
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Founisè Aparèy pake TO-263AA (IXFA) TO-263AA (IXFA) PLUS264™ TO-263AA (IXFA)
Pakèt Tube Tube Tube Tube
Drenaj Sous Voltage (Vdss) 1000 V 800 V 500 V 75 V
Kouran - Kontini Drain (Id) @ 25 ° C 5A (Tc) 7A (Tc) 100A (Tc) 230A (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-264-3, TO-264AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pòtay Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V 32 nC @ 10 V 240 nC @ 10 V 178 nC @ 10 V
Dissipasyon pouvwa (Max) 250W (Tc) 200W (Tc) 1890W (Tc) 480W (Tc)
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 1830 pF @ 25 V 1890 pF @ 25 V 20000 pF @ 25 V 10500 pF @ 25 V
Nimewo pwodwi baz IXFA5N100 IXFA7N80 IXFB100 IXFA230
Vgs (th) (Max) @ Id 6V @ 250µA 5V @ 1mA 5V @ 8mA 4V @ 1mA
Vgs (Max) ±30V ±30V ±30V ±20V
Rds Sou (Max) @ Id, Vgs 2.8Ohm @ 2.5A, 10V 1.44Ohm @ 3.5A, 10V 49mOhm @ 50A, 10V 4.2mOhm @ 50A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IXFA5N100P fich PDF

Download IXFA5N100P PDF fich ak dokiman IXYS pou IXFA5N100P - IXYS.

Fich
IXF(A,H,P)5N100P.pdf

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IXFA5N100P Image

IXFA5N100P

IXYS
32D-IXFA5N100P

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