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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXFE180N10
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXFE180N10 - IXYS

Manifakti Nimewo Pati
IXFE180N10
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXFE180N10
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 176A SOT227B
Deskripsyon detaye
Pake
SOT-227-4, miniBLOC
Done fèy
IXFE180N10.pdf
Nan stok: 4650

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Espesifikasyon

Espesifikasyon IXFE180N10 Tech
IXYS - IXFE180N10 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXFE180N10

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 4V @ 8mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-227B  
Seri HiPerFET™  
Rds Sou (Max) @ Id, Vgs 8mOhm @ 90A, 10V  
Dissipasyon pouvwa (Max) 500W (Tc)  
Pake / Ka SOT-227-4, miniBLOC  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds 9100 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 360 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 176A (Tc)  
Nimewo pwodwi baz IXFE180  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXFE180N10.

Pwodwi atribi IXFE180N10 IXFE39N90 IXFC40N30Q IXFE44N60
Nimewo Pati IXFE180N10 IXFE39N90 IXFC40N30Q IXFE44N60
Manifakti IXYS IXYS IXYS IXYS
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Chassis Mount Chassis Mount Through Hole Chassis Mount
Founisè Aparèy pake SOT-227B SOT-227B ISOPLUS220™ SOT-227B
Pakèt Tube Tube Tube Tube
Vgs (Max) ±20V ±20V - ±20V
Rds Sou (Max) @ Id, Vgs 8mOhm @ 90A, 10V 220mOhm @ 19.5A, 10V - 130mOhm @ 22A, 10V
Pake / Ka SOT-227-4, miniBLOC SOT-227-4, miniBLOC ISOPLUS220™ SOT-227-4, miniBLOC
Dissipasyon pouvwa (Max) 500W (Tc) 580W (Tc) - 500W (Tc)
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 100 V 900 V 300 V 600 V
Vgs (th) (Max) @ Id 4V @ 8mA 5V @ 8mA - 4.5V @ 8mA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V - 10V
Nimewo pwodwi baz IXFE180 IXFE39 IXFC40N30 IXFE44
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 176A (Tc) 34A (Tc) - 41A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 9100 pF @ 25 V 13400 pF @ 25 V - 8900 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 360 nC @ 10 V 375 nC @ 10 V - 330 nC @ 10 V
Seri HiPerFET™ HiPerFET™ - HiPerFET™
Operating Tanperati -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)

IXFE180N10 fich PDF

Download IXFE180N10 PDF fich ak dokiman IXYS pou IXFE180N10 - IXYS.

PCN obsolescence/ eol
Mult Devices OBS 24/Feb/2014.pdf
Fich
IXFE180N10.pdf

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Sètifikasyon & Manm

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IXYS

IXFE180N10

IXYS
32D-IXFE180N10

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