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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXFR55N50
IXFR55N50 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXFR55N50 - IXYS

Manifakti Nimewo Pati
IXFR55N50
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXFR55N50
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 48A ISOPLUS247
Deskripsyon detaye
Pake
TO-247-3
Done fèy
IXFR(50,55)N50.pdf
Nan stok: 4800

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Espesifikasyon

Espesifikasyon IXFR55N50 Tech
IXYS - IXFR55N50 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXFR55N50

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 4.5V @ 8mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ISOPLUS247™  
Seri HiPerFET™  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 27.5A, 10V  
Dissipasyon pouvwa (Max) 400W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 9400 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 330 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 48A (Tc)  
Nimewo pwodwi baz IXFR55  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXFR55N50.

Pwodwi atribi IXFR55N50 IXFT140N10P IXFR50N50 IXFT26N50Q
Nimewo Pati IXFR55N50 IXFT140N10P IXFR50N50 IXFT26N50Q
Manifakti IXYS IXYS IXYS IXYS
Nimewo pwodwi baz IXFR55 IXFT140 IXFR50 IXFT26
Fèt tip N-Channel N-Channel N-Channel N-Channel
Founisè Aparèy pake ISOPLUS247™ TO-268AA ISOPLUS247™ TO-268AA
Pake / Ka TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
FET Feature - - - -
Pakèt Tube Box Tube Tube
Mounting Kalite Through Hole Surface Mount Through Hole Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 48A (Tc) 140A (Tc) 43A (Tc) 26A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 330 nC @ 10 V 155 nC @ 10 V 330 nC @ 10 V 95 nC @ 10 V
Operating Tanperati -40°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 500 V 100 V 500 V 500 V
Dissipasyon pouvwa (Max) 400W (Tc) 600W (Tc) 400W (Tc) 300W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 9400 pF @ 25 V 4700 pF @ 25 V 9400 pF @ 25 V 3900 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri HiPerFET™ HiPerFET™, Polar HiPerFET™ HiPerFET™
Rds Sou (Max) @ Id, Vgs 90mOhm @ 27.5A, 10V 11mOhm @ 70A, 10V 100mOhm @ 25A, 10V 200mOhm @ 13A, 10V
Vgs (th) (Max) @ Id 4.5V @ 8mA 5V @ 4mA 4.5V @ 8mA 4.5V @ 4mA

IXFR55N50 fich PDF

Download IXFR55N50 PDF fich ak dokiman IXYS pou IXFR55N50 - IXYS.

PCN obsolescence/ eol
Mult Devices OBS 24/Feb/2014.pdf
Fich
IXFR(50,55)N50.pdf

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Sètifikasyon & Manm

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IXFR55N50 Image

IXFR55N50

IXYS
32D-IXFR55N50

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