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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXTP10P50P
IXTP10P50P Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXTP10P50P - IXYS

Manifakti Nimewo Pati
IXTP10P50P
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXTP10P50P
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 500V 10A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IXTx10P50P.pdf
RoHs Status
Nan stok: 12752

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Espesifikasyon

Espesifikasyon IXTP10P50P Tech
IXYS - IXTP10P50P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXTP10P50P

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri PolarP™  
Rds Sou (Max) @ Id, Vgs 1Ohm @ 5A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2840 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc)  
Nimewo pwodwi baz IXTP10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXTP10P50P.

Pwodwi atribi IXTP10P50P IXTP12N50P IXTP100N04T2 IXTP08N50D2
Nimewo Pati IXTP10P50P IXTP12N50P IXTP100N04T2 IXTP08N50D2
Manifakti IXYS IXYS IXYS IXYS
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±20V ±30V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 2840 pF @ 25 V 1830 pF @ 25 V 2690 pF @ 25 V 312 pF @ 25 V
Fèt tip P-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Nimewo pwodwi baz IXTP10 IXTP12 IXTP100 IXTP08
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220-3 TO-220-3
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs (th) (Max) @ Id 4V @ 250µA 5.5V @ 250µA 4V @ 250µA -
Drenaj Sous Voltage (Vdss) 500 V 500 V 40 V 500 V
Pakèt Tube Tube Tube Tube
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 29 nC @ 10 V 25.5 nC @ 10 V 12.7 nC @ 5 V
Seri PolarP™ Polar TrenchT2™ Depletion
Dissipasyon pouvwa (Max) 300W (Tc) 200W (Tc) 150W (Tc) 60W (Tc)
Rds Sou (Max) @ Id, Vgs 1Ohm @ 5A, 10V 500mOhm @ 6A, 10V 7mOhm @ 25A, 10V 4.6Ohm @ 400mA, 0V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc) 12A (Tc) 100A (Tc) 800mA (Tc)
FET Feature - - - Depletion Mode

IXTP10P50P fich PDF

Download IXTP10P50P PDF fich ak dokiman IXYS pou IXTP10P50P - IXYS.

Fich
IXTx10P50P.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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IXTP10P50P Image

IXTP10P50P

IXYS
32D-IXTP10P50P

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