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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXTQ60N20T
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXTQ60N20T - IXYS

Manifakti Nimewo Pati
IXTQ60N20T
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXTQ60N20T
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 60A TO3P
Deskripsyon detaye
Pake
TO-3P-3, SC-65-3
Done fèy
IXTQ60N20T.pdf
RoHs Status
Nan stok: 14276

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IXTQ60N20T Tech
IXYS - IXTQ60N20T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXTQ60N20T

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-3P  
Seri Trench  
Rds Sou (Max) @ Id, Vgs 40mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 500W (Ta)  
Pake / Ka TO-3P-3, SC-65-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4530 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 73 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc)  
Nimewo pwodwi baz IXTQ60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXTQ60N20T.

Pwodwi atribi IXTQ60N20T IXTQ60N10T IXTQ52N30P IXTQ54N30T
Nimewo Pati IXTQ60N20T IXTQ60N10T IXTQ52N30P IXTQ54N30T
Manifakti IXYS IXYS IXYS IXYS
Drenaj Sous Voltage (Vdss) 200 V 100 V 300 V 300 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Kapasite Antre (Ciss) (Max) @ Vds 4530 pF @ 25 V 2650 pF @ 25 V 3490 pF @ 25 V -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri Trench Trench Polar Trench
Founisè Aparèy pake TO-3P TO-3P TO-3P TO-3P
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Nimewo pwodwi baz IXTQ60 IXTQ60 IXTQ52 IXTQ54
Pòtay Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 49 nC @ 10 V 110 nC @ 10 V -
Vgs (th) (Max) @ Id 5V @ 250µA 4.5V @ 50µA 5V @ 250µA -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Dissipasyon pouvwa (Max) 500W (Ta) 176W (Tc) 400W (Tc) -
Pakèt Tube Tube Tube Tube
Pake / Ka TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Vgs (Max) ±20V ±30V ±20V -
Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc) 60A (Tc) 52A (Tc) 54A (Tc)
Rds Sou (Max) @ Id, Vgs 40mOhm @ 30A, 10V 18mOhm @ 25A, 10V 66mOhm @ 26A, 10V -

IXTQ60N20T fich PDF

Download IXTQ60N20T PDF fich ak dokiman IXYS pou IXTQ60N20T - IXYS.

PCN konsepsyon/spesifikasyon
Multiple Devices Material 23/Jun/2020.pdf

Shipment

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Sètifikasyon & Manm

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IXYS

IXTQ60N20T

IXYS
32D-IXTQ60N20T

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