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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayVBH40-05B
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VBH40-05B - IXYS

Manifakti Nimewo Pati
VBH40-05B
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-VBH40-05B
ECAD modèl
Pati Deskripsyon
MOSFET 4N-CH 500V 40A V2
Deskripsyon detaye
Pake
V2-PAK
Done fèy
VBH40-05B.pdf
RoHs Status
Nan stok: 5120

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon VBH40-05B Tech
IXYS - VBH40-05B espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - VBH40-05B

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 4V @ 8mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake V2-PAK  
Seri HiPerFET™  
Rds Sou (Max) @ Id, Vgs 116mOhm @ 30A, 10V  
Pouvwa - Max -  
Pake / Ka V2-PAK  
Pakèt Box  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 270nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 500V  
Kouran - Kontini Drain (Id) @ 25 ° C 40A  
Konfigirasyon 4 N-Channel (Half Bridge)  
Nimewo pwodwi baz VBH40  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS VBH40-05B.

Pwodwi atribi VBH40-05B AO8814 SI5997DU-T1-GE3 CSD88537NDT
Nimewo Pati VBH40-05B AO8814 SI5997DU-T1-GE3 CSD88537NDT
Manifakti IXYS Alpha & Omega Semiconductor Inc. Vishay Siliconix Texas Instruments
Founisè Aparèy pake V2-PAK 8-TSSOP PowerPAK® ChipFet Dual 8-SOIC
Konfigirasyon 4 N-Channel (Half Bridge) 2 N-Channel (Dual) Common Drain 2 P-Channel (Dual) 2 N-Channel (Dual)
Nimewo pwodwi baz VBH40 AO881 SI5997 CSD88537
FET Feature - Logic Level Gate Logic Level Gate -
Rds Sou (Max) @ Id, Vgs 116mOhm @ 30A, 10V 16mOhm @ 7.5A, 10V 54mOhm @ 3A, 10V 15mOhm @ 8A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 270nC @ 10V 15.4nC @ 4.5V 14.5nC @ 10V 18nC @ 10V
Mounting Kalite Chassis Mount Surface Mount Surface Mount Surface Mount
Pakèt Box Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka V2-PAK 8-TSSOP (0.173", 4.40mm Width) PowerPAK® ChipFET™ Dual 8-SOIC (0.154", 3.90mm Width)
Pouvwa - Max - 1.5W 10.4W 2.1W
Kapasite Antre (Ciss) (Max) @ Vds - 1390pF @ 10V 430pF @ 15V 1400pF @ 30V
Vgs (th) (Max) @ Id 4V @ 8mA 1V @ 250µA 2.4V @ 250µA 3.6V @ 250µA
Drenaj Sous Voltage (Vdss) 500V 20V 30V 60V
Seri HiPerFET™ - TrenchFET® NexFET™
Kouran - Kontini Drain (Id) @ 25 ° C 40A - 6A 15A
Operating Tanperati -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

VBH40-05B fich PDF

Download VBH40-05B PDF fich ak dokiman IXYS pou VBH40-05B - IXYS.

Fich
VBH40-05B.pdf

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
IXYS

VBH40-05B

IXYS
32D-VBH40-05B

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