Tanpri, al gade nan vèsyon an angle kòm vèsyon ofisyèl nou an.

: France~~(Français)~~ Germany~~(Deutsch)~~ Italy~~(Italia)~~ Russian~~(русский)~~ Poland~~(polski)~~ Czech~~(Čeština)~~ Luxembourg~~(Lëtzebuergesch)~~ Netherlands~~(Nederland)~~ Iceland~~(íslenska)~~ Hungarian~~(Magyarország)~~ Spain~~(español)~~ Portugal~~(Português)~~ Turkey~~(Türk dili)~~ Bulgaria~~(Български език)~~ Ukraine~~(Україна)~~ Greece~~(Ελλάδα)~~ Israel~~(עִבְרִית)~~ Sweden~~(Svenska)~~ Finland~~(Svenska)~~ Finland~~(Suomi)~~ Romania~~(românesc)~~ Moldova~~(românesc)~~ Slovakia~~(Slovenská)~~ Denmark~~(Dansk)~~ Slovenia~~(Slovenija)~~ Slovenia~~(Hrvatska)~~ Croatia~~(Hrvatska)~~ Serbia~~(Hrvatska)~~ Montenegro~~(Hrvatska)~~ Bosnia and Herzegovina~~(Hrvatska)~~ Lithuania~~(lietuvių)~~ Spain~~(Português)~~ Switzerland~~(Deutsch)~~ United Kingdom~~(English)~~ Japan~~(日本語)~~ Korea~~(한국의)~~ Thailand~~(ภาษาไทย)~~ Malaysia~~(Melayu)~~ Singapore~~(Melayu)~~ Vietnam~~(Tiếng Việt)~~ Philippines~~(Pilipino)~~ United Arab Emirates~~(العربية)~~ Iran~~(فارسی)~~ Tajikistan~~(فارسی)~~ India~~(हिंदी)~~ Madagascar~~(malaɡasʲ)~~ New Zealand~~(Maori)~~ Brazil~~(Português)~~ Angola~~(Português)~~ Mozambique~~(Português)~~ United States~~(English)~~ Canada~~(English)~~ Haiti~~(Ayiti)~~ Mexico~~(español)~~

Kay Pwodwi yo Diskresyon semiconductor pwodwi Transistors - FETs, MOSFETs - Array~~VWM200-01P~~

Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

~~Favori~~

VWM200-01P - IXYS

Manifakti Nimewo Pati: VWM200-01P

Manifakti: IXYS Corporation

Allelco Nimewo Pati: 32D-VWM200-01P

ECAD modèl

Pati Deskripsyon: MOSFET 6N-CH 100V 210A V2

Deskripsyon detaye

Pake: V2-PAK

Done fèy: VWM200-01P.pdf

~~Konpare~~

Nan stok: 3850

Espesifikasyon

Espesifikasyon VWM200-01P Tech
IXYS - VWM200-01P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - VWM200-01P

Pwodwi atribi	Valè atribi
Manifakti	IXYS Corporation
Vgs (th) (Max) @ Id	4V @ 2mA
Teknoloji	MOSFET (Metal Oxide)
Founisè Aparèy pake	V2-PAK
Seri	-
Rds Sou (Max) @ Id, Vgs	5.2mOhm @ 100A, 10V
Pouvwa - Max	-
Pake / Ka	V2-PAK
Pakèt	Box

Pwodwi atribi	Valè atribi
Operating Tanperati	-40°C ~ 175°C (TJ)
Mounting Kalite	Chassis Mount
Kapasite Antre (Ciss) (Max) @ Vds	-
Pòtay Charge (Qg) (Max) @ Vgs	430nC @ 10V
FET Feature	-
Drenaj Sous Voltage (Vdss)	100V
Kouran - Kontini Drain (Id) @ 25 ° C	210A
Konfigirasyon	6 N-Channel (3-Phase Bridge)
Nimewo pwodwi baz	VWM200

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS VWM200-01P.

Pwodwi atribi
Nimewo Pati	VWM200-01P	FDMS3669S	FDPC8011S	AO6602L
Manifakti	IXYS	onsemi	onsemi	Alpha & Omega Semiconductor Inc.
Vgs (th) (Max) @ Id	4V @ 2mA	2.7V @ 250µA	2.2V @ 250µA, 2.2V @ 1mA	3V @ 250µA
Nimewo pwodwi baz	VWM200	FDMS3669	FDPC8	AO660
Mounting Kalite	Chassis Mount	Surface Mount	Surface Mount	Surface Mount
Pakèt	Box	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds	-	1605pF @ 15V	1240pF @ 13V, 4335pF @ 13V	240pF @ 15V
Pake / Ka	V2-PAK	8-PowerTDFN	8-PowerWDFN	SC-74, SOT-457
Pòtay Charge (Qg) (Max) @ Vgs	430nC @ 10V	24nC @ 10V	19nC @ 10V, 64nC @ 10V	8.5nC @ 10V
Drenaj Sous Voltage (Vdss)	100V	30V	25V	30V
Founisè Aparèy pake	V2-PAK	Power56	Powerclip-33	6-TSOP
Kouran - Kontini Drain (Id) @ 25 ° C	210A	13A, 18A	13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)	-
FET Feature	-	Logic Level Gate	-	Logic Level Gate
Operating Tanperati	-40°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Pouvwa - Max	-	1W	800mW (Ta), 900mW (Ta)	1.15W
Rds Sou (Max) @ Id, Vgs	5.2mOhm @ 100A, 10V	10mOhm @ 13A, 10V	6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V	75mOhm @ 3.1A, 10V
Teknoloji	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Konfigirasyon	6 N-Channel (3-Phase Bridge)	2 N-Channel (Dual) Asymmetrical	2 N-Channel (Dual) Asymmetrical	N and P-Channel Complementary
Seri	-	PowerTrench®	PowerTrench®	-

VWM200-01P fich PDF

Download VWM200-01P PDF fich ak dokiman IXYS pou VWM200-01P - IXYS.

Fich: VWM200-01P.pdf

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VWM200-01P

IXYS
32D-VWM200-01P

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