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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - Bipolè (BJT) - Array, Pre-BazeEMD9T2R
EMD9T2R Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

EMD9T2R - Rohm Semiconductor

Manifakti Nimewo Pati
EMD9T2R
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-EMD9T2R
ECAD modèl
Pati Deskripsyon
TRANS NPN/PNP PREBIAS 0.15W EMT6
Deskripsyon detaye
Pake
SOT-563, SOT-666
Done fèy
EMD9T2R.pdf
RoHs Status
Nan stok: 299350

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon EMD9T2R Tech
Rohm Semiconductor - EMD9T2R espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - EMD9T2R

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Pèseptè Emitter pann (Max) 50V  
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA  
Transistor Tip 1 NPN, 1 PNP - Pre-Biased (Dual)  
Founisè Aparèy pake EMT6  
Seri -  
Rezistans - Emitter Sèvi (R2) 47kOhms  
Rezistans - Sèvi (R1) 10kOhms  
Pouvwa - Max 150mW  
Pwodwi atribi Valè atribi  
Pake / Ka SOT-563, SOT-666  
Pakèt Tape & Reel (TR)  
Mounting Kalite Surface Mount  
Frekans - Tranzisyon 250MHz  
DC aktyèl DC (HFE) (Min) @ Ic, Vce 68 @ 5mA, 5V  
Kouran - Koupe Cutè (Max) 500nA  
Kouran - Pèseptè (Ic) (Max) 100mA  
Nimewo pwodwi baz EMD9T2  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor EMD9T2R.

Pwodwi atribi EMD9T2R EMD6T2R EMD9G8T2R EMD9GT2R
Nimewo Pati EMD9T2R EMD6T2R EMD9G8T2R EMD9GT2R
Manifakti Rohm Semiconductor Rohm Semiconductor LAPIS Technology LAPIS Technology
Frekans - Tranzisyon 250MHz 250MHz - -
Nimewo pwodwi baz EMD9T2 EMD6T2 - -
Kouran - Koupe Cutè (Max) 500nA - - -
DC aktyèl DC (HFE) (Min) @ Ic, Vce 68 @ 5mA, 5V 100 @ 1mA, 5V - -
Rezistans - Sèvi (R1) 10kOhms 4.7kOhms - -
Pouvwa - Max 150mW 150mW - -
Kouran - Pèseptè (Ic) (Max) 100mA 100mA - -
Pake / Ka SOT-563, SOT-666 SOT-563, SOT-666 - -
Transistor Tip 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Voltage - Pèseptè Emitter pann (Max) 50V 50V - -
Seri - - - -
Founisè Aparèy pake EMT6 EMT6 - -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA - -
Rezistans - Emitter Sèvi (R2) 47kOhms - - -
Mounting Kalite Surface Mount Surface Mount - -

EMD9T2R fich PDF

Download EMD9T2R PDF fich ak dokiman Rohm Semiconductor pou EMD9T2R - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

Shipment

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Sètifikasyon & Manm

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EMD9T2R Image

EMD9T2R

Rohm Semiconductor
32D-EMD9T2R

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