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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleQS5U28TR
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

QS5U28TR - Rohm Semiconductor

Manifakti Nimewo Pati
QS5U28TR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-QS5U28TR
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 2A TSMT5
Deskripsyon detaye
Pake
SOT-23-5 Thin, TSOT-23-5
Done fèy
QS5U28TR.pdf
RoHs Status
Nan stok: 135960

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon QS5U28TR Tech
Rohm Semiconductor - QS5U28TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - QS5U28TR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2V @ 1mA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT5  
Seri -  
Rds Sou (Max) @ Id, Vgs 125mOhm @ 2A, 4.5V  
Dissipasyon pouvwa (Max) 1.25W (Ta)  
Pake / Ka SOT-23-5 Thin, TSOT-23-5  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 450 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 4.8 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2A (Ta)  
Nimewo pwodwi baz QS5U28  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor QS5U28TR.

Pwodwi atribi QS5U28TR QS5U36TR QS5U34TR QS5U33TR
Nimewo Pati QS5U28TR QS5U36TR QS5U34TR QS5U33TR
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Founisè Aparèy pake TSMT5 TSMT5 TSMT5 TSMT5
Pake / Ka SOT-23-5 Thin, TSOT-23-5 SOT-23-5 Thin, TSOT-23-5 SOT-23-5 Thin, TSOT-23-5 SOT-23-5 Thin, TSOT-23-5
Kapasite Antre (Ciss) (Max) @ Vds 450 pF @ 10 V 280 pF @ 10 V 110 pF @ 10 V 310 pF @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 4V, 10V
Rds Sou (Max) @ Id, Vgs 125mOhm @ 2A, 4.5V 81mOhm @ 2.5A, 4.5V 180mOhm @ 1.5A, 4.5V 135mOhm @ 2A, 10V
Vgs (Max) ±12V ±10V 10V ±20V
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 30 V
Seri - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip P-Channel N-Channel N-Channel P-Channel
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 4.8 nC @ 4.5 V 3.5 nC @ 4.5 V 2.5 nC @ 4.5 V 3.4 nC @ 5 V
Vgs (th) (Max) @ Id 2V @ 1mA 1.3V @ 1mA 1.3V @ 1mA 2.5V @ 1mA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 2A (Ta) 2.5A (Ta) 1.5A (Ta) 2A (Ta)
Nimewo pwodwi baz QS5U28 QS5U36 QS5U34 QS5U33
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta)

QS5U28TR fich PDF

Download QS5U28TR PDF fich ak dokiman Rohm Semiconductor pou QS5U28TR - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf
PCN konsepsyon/spesifikasyon
TSMT Package Updates 24/Dec/2014.pdf

Shipment

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Sètifikasyon & Manm

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Rohm Semiconductor

QS5U28TR

Rohm Semiconductor
32D-QS5U28TR

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