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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleR5016ANX
R5016ANX Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

R5016ANX - Rohm Semiconductor

Manifakti Nimewo Pati
R5016ANX
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-R5016ANX
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 16A TO220FM
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
R5016ANX.pdf
RoHs Status
Nan stok: 10761

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Kantite

Espesifikasyon

Espesifikasyon R5016ANX Tech
Rohm Semiconductor - R5016ANX espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - R5016ANX

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 4.5V @ 1mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220FM  
Seri -  
Rds Sou (Max) @ Id, Vgs 270mOhm @ 8A, 10V  
Dissipasyon pouvwa (Max) 50W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1800 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta)  
Nimewo pwodwi baz R5016  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor R5016ANX.

Pwodwi atribi R5016ANX R5011FNX R5011ANX R5013ANX FU6
Nimewo Pati R5016ANX R5011FNX R5011ANX R5013ANX FU6
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor LAPIS Technology
Drenaj Sous Voltage (Vdss) 500 V 500 V 500 V -
Seri - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Dissipasyon pouvwa (Max) 50W (Tc) 50W (Tc) 50W (Tc) -
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Founisè Aparèy pake TO-220FM TO-220FM TO-220FM -
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole -
Fèt tip N-Channel N-Channel N-Channel -
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Pòtay Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 30 nC @ 10 V 30 nC @ 10 V -
Kapasite Antre (Ciss) (Max) @ Vds 1800 pF @ 25 V 950 pF @ 25 V 1000 pF @ 25 V -
Vgs (th) (Max) @ Id 4.5V @ 1mA 4V @ 1mA 4.5V @ 1mA -
Pakèt Bulk Bulk Bulk -
Nimewo pwodwi baz R5016 R5011 R5011 -
Rds Sou (Max) @ Id, Vgs 270mOhm @ 8A, 10V 520mOhm @ 5.5A, 10V 500mOhm @ 5.5A, 10V -
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta) 11A (Ta), 5.4A (Tc) 11A (Ta) -
Vgs (Max) ±30V ±30V ±30V -

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
R5016ANX Image

R5016ANX

Rohm Semiconductor
32D-R5016ANX

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