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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleR6004ENX
R6004ENX Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

R6004ENX - Rohm Semiconductor

Manifakti Nimewo Pati
R6004ENX
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-R6004ENX
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 4A TO220FM
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
R6004ENX.pdf
RoHs Status
Nan stok: 57270

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Kantite

Espesifikasyon

Espesifikasyon R6004ENX Tech
Rohm Semiconductor - R6004ENX espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - R6004ENX

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 4V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220FM  
Seri -  
Rds Sou (Max) @ Id, Vgs 980mOhm @ 1.5A, 10V  
Dissipasyon pouvwa (Max) 40W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 250 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Tc)  
Nimewo pwodwi baz R6004  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor R6004ENX.

Pwodwi atribi R6004ENX R6003KND3TL1 R6002END3TL1 R6004ENDTL
Nimewo Pati R6004ENX R6003KND3TL1 R6002END3TL1 R6004ENDTL
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Founisè Aparèy pake TO-220FM TO-252 TO-252 CPT3
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Tc) 3A (Tc) 1.7A (Tc) 4A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Dissipasyon pouvwa (Max) 40W (Tc) 44W (Tc) 26W (Tc) 20W (Tc)
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 600 V 600 V 600 V 600 V
Vgs (th) (Max) @ Id 4V @ 1mA 5.5V @ 1mA 4V @ 1mA 4V @ 1mA
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Seri - - - -
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 980mOhm @ 1.5A, 10V 1.5Ohm @ 1A, 10V 3.4Ohm @ 500mA, 10V 980mOhm @ 1.5A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 8 nC @ 10 V 6.5 nC @ 10 V 15 nC @ 10 V
Pake / Ka TO-220-3 Full Pack TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Kapasite Antre (Ciss) (Max) @ Vds 250 pF @ 25 V 185 pF @ 25 V 65 pF @ 25 V 250 pF @ 25 V
Operating Tanperati 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Nimewo pwodwi baz R6004 R6003 R6002 R6004

R6004ENX fich PDF

Download R6004ENX PDF fich ak dokiman Rohm Semiconductor pou R6004ENX - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

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R6004ENX Image

R6004ENX

Rohm Semiconductor
32D-R6004ENX

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