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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleR6018JNJGTL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

R6018JNJGTL - Rohm Semiconductor

Manifakti Nimewo Pati
R6018JNJGTL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-R6018JNJGTL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 18A LPTS
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
R6018JNJGTL.pdf
RoHs Status
Nan stok: 17958

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon R6018JNJGTL Tech
Rohm Semiconductor - R6018JNJGTL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - R6018JNJGTL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 7V @ 4.2mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake LPTS  
Seri -  
Rds Sou (Max) @ Id, Vgs 286mOhm @ 9A, 15V  
Dissipasyon pouvwa (Max) 220W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1300 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 42 nC @ 15 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 15V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc)  
Nimewo pwodwi baz R6018  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor R6018JNJGTL.

Pwodwi atribi R6018JNJGTL R6015FNX R6018JNXC7G R6015KNX
Nimewo Pati R6018JNJGTL R6015FNX R6018JNXC7G R6015KNX
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Seri - - - -
Vgs (th) (Max) @ Id 7V @ 4.2mA 5V @ 1mA 7V @ 4.2mA 5V @ 1mA
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Pòtay Charge (Qg) (Max) @ Vgs 42 nC @ 15 V 42 nC @ 10 V 42 nC @ 15 V 27.5 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 1300 pF @ 100 V 1660 pF @ 25 V 1300 pF @ 100 V 1050 pF @ 25 V
Drenaj Sous Voltage (Vdss) 600 V 600 V 600 V 600 V
Founisè Aparèy pake LPTS TO-220FM TO-220FM TO-220FM
Dissipasyon pouvwa (Max) 220W (Tc) 50W (Tc) 72W (Tc) 60W (Tc)
Pakèt Tape & Reel (TR) Bulk Tube Bulk
Vgs (Max) ±30V ±30V ±30V ±20V
Nimewo pwodwi baz R6018 R6015 R6018 R6015
Rds Sou (Max) @ Id, Vgs 286mOhm @ 9A, 15V 350mOhm @ 7.5A, 10V 286mOhm @ 9A, 15V 290mOhm @ 6.5A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 15V 10V 15V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Through Hole Through Hole Through Hole
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc) 15A (Ta) 18A (Tc) 15A (Tc)

Shipment

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Sètifikasyon & Manm

Wè plis
Rohm Semiconductor

R6018JNJGTL

Rohm Semiconductor
32D-R6018JNJGTL

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