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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleR6025JNXC7G
R6025JNXC7G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

R6025JNXC7G - Rohm Semiconductor

Manifakti Nimewo Pati
R6025JNXC7G
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-R6025JNXC7G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 25A TO220FM
Pake
TO-220-3 Full Pack
Done fèy
R6025JNXC7G.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 12681

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon R6025JNXC7G Tech
Rohm Semiconductor - R6025JNXC7G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - R6025JNXC7G

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 7V @ 4.5mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220FM  
Seri -  
Rds Sou (Max) @ Id, Vgs 182mOhm @ 12.5A, 15V  
Dissipasyon pouvwa (Max) 85W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1900 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 57 nC @ 15 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 15V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 25A (Tc)  
Nimewo pwodwi baz R6025  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor R6025JNXC7G.

Pwodwi atribi R6025JNXC7G R6024KNX R6025JNZ4C13 R6024KNZ1C9
Nimewo Pati R6025JNXC7G R6024KNX R6025JNZ4C13 R6024KNZ1C9
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-247-3 TO-247-3
Kondwi Voltage (Max Rds sou, Min Rds sou) 15V 10V 15V 10V
Rds Sou (Max) @ Id, Vgs 182mOhm @ 12.5A, 15V 165mOhm @ 11.3A, 10V 182mOhm @ 12.5A, 15V 165mOhm @ 11.3A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1900 pF @ 100 V 2000 pF @ 25 V 1900 pF @ 100 V 2000 pF @ 25 V
Nimewo pwodwi baz R6025 R6024 R6025 -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±30V ±20V ±30V ±20V
Vgs (th) (Max) @ Id 7V @ 4.5mA 5V @ 1mA 7V @ 4.5mA 5V @ 1mA
Seri - - - -
Drenaj Sous Voltage (Vdss) 600 V 600 V 600 V 600 V
Kouran - Kontini Drain (Id) @ 25 ° C 25A (Tc) 24A (Tc) 25A (Tc) 24A (Tc)
Dissipasyon pouvwa (Max) 85W (Tc) 74W (Tc) 306W (Tc) 245W (Tc)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Founisè Aparèy pake TO-220FM TO-220FM TO-247G TO-247
Pòtay Charge (Qg) (Max) @ Vgs 57 nC @ 15 V 45 nC @ 10 V 57 nC @ 15 V 45 nC @ 10 V
Pakèt Tube Bulk Tube Tube

Shipment

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R6025JNXC7G Image

R6025JNXC7G

Rohm Semiconductor
32D-R6025JNXC7G

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