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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleRB521S-30FTE61
RB521S-30FTE61 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RB521S-30FTE61 - Rohm Semiconductor

Manifakti Nimewo Pati
RB521S-30FTE61
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RB521S-30FTE61
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 30V 200MA EMD2
Deskripsyon detaye
Pake
SC-79, SOD-523
Done fèy
RB521S-30FTE61.pdf
RoHs Status
Nan stok: 3990

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RB521S-30FTE61 Tech
Rohm Semiconductor - RB521S-30FTE61 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RB521S-30FTE61

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 200 mA  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake EMD2  
Vitès Small Signal =< 200mA (Io), Any Speed  
Seri -  
Pake / Ka SC-79, SOD-523  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 125°C (Max)  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 30 µA @ 10 V  
Kouran - Mwayèn Rectified (Io) 200mA  
Kapasite @ Vr, F -  
Nimewo pwodwi baz RB521  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RB521S-30FTE61.

Pwodwi atribi RB521S-30FTE61 RB521S-30FJTE61 RB521S-30TE61 RB521S-30GTE61
Nimewo Pati RB521S-30FTE61 RB521S-30FJTE61 RB521S-30TE61 RB521S-30GTE61
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Operating Tanperati - Junction 125°C (Max) - 125°C (Max) -
Mounting Kalite Surface Mount - Surface Mount -
Pake / Ka SC-79, SOD-523 - SC-79, SOD-523 -
Voltage - DC ranvèse (Vr) (Max) 30 V - 30 V -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake EMD2 - EMD2 -
Seri - - - -
Nimewo pwodwi baz RB521 RB521 RB521 RB521
Kouran - Reverse Leakage @ Vr 30 µA @ 10 V - 30 µA @ 10 V -
Vitès Small Signal =< 200mA (Io), Any Speed - Small Signal =< 200mA (Io), Any Speed -
Kouran - Mwayèn Rectified (Io) 200mA - 200mA -
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 200 mA - 500 mV @ 200 mA -
Kapasite @ Vr, F - - - -
Teknoloji Schottky - Schottky -

RB521S-30FTE61 fich PDF

Download RB521S-30FTE61 PDF fich ak dokiman Rohm Semiconductor pou RB521S-30FTE61 - Rohm Semiconductor.

PCN obsolescence/ eol
Mult Dev EOL 11/Mar/2020.pdf Multiple Devices 15/Jan/2015.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
RB521S-30FTE61 Image

RB521S-30FTE61

Rohm Semiconductor
32D-RB521S-30FTE61

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