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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRDR005N25TL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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RDR005N25TL - Rohm Semiconductor

Manifakti Nimewo Pati
RDR005N25TL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RDR005N25TL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 250V 500MA TSMT3
Deskripsyon detaye
Pake
SC-96
Done fèy
RDR005N25TL.pdf
RoHs Status
Konpare
Nan stok: 95620

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Espesifikasyon

Espesifikasyon RDR005N25TL Tech
Rohm Semiconductor - RDR005N25TL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RDR005N25TL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 3V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT3  
Seri -  
Rds Sou (Max) @ Id, Vgs 8.8Ohm @ 250mA, 10V  
Dissipasyon pouvwa (Max) 540mW (Ta)  
Pake / Ka SC-96  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 70 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 3.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 250 V  
Kouran - Kontini Drain (Id) @ 25 ° C 500mA (Ta)  
Nimewo pwodwi baz RDR005  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RDR005N25TL.

Pwodwi atribi RDR005N25TL NTD95N02RG DMPH6050SFGQ-7 SI3456CDV-T1-GE3
Nimewo Pati RDR005N25TL NTD95N02RG DMPH6050SFGQ-7 SI3456CDV-T1-GE3
Manifakti Rohm Semiconductor onsemi Diodes Incorporated Vishay Siliconix
Fèt tip N-Channel N-Channel P-Channel N-Channel
Seri - - Automotive, AEC-Q101 TrenchFET®
Vgs (th) (Max) @ Id 3V @ 1mA 2V @ 250µA 3V @ 250µA 3V @ 250µA
Nimewo pwodwi baz RDR005 NTD95 DMPH6050 SI3456
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 70 pF @ 25 V 2400 pF @ 20 V 1293 pF @ 30 V 460 pF @ 15 V
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±20V ±20V ±20V ±20V
Kouran - Kontini Drain (Id) @ 25 ° C 500mA (Ta) 12A (Ta), 32A (Tc) 6.1A (Ta), 18A (Tc) 7.7A (Tc)
Dissipasyon pouvwa (Max) 540mW (Ta) 1.25W (Ta), 86W (Tc) 1.2W (Ta) 2W (Ta), 3.3W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 3.5 nC @ 10 V 21 nC @ 4.5 V 24.1 nC @ 10 V 12 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 8.8Ohm @ 250mA, 10V 5mOhm @ 20A, 10V 50mOhm @ 7A, 10V 34mOhm @ 6.1A, 10V
Operating Tanperati 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake TSMT3 DPAK PowerDI3333-8 6-TSOP
Drenaj Sous Voltage (Vdss) 250 V 24 V 60 V 30 V
Pake / Ka SC-96 TO-252-3, DPak (2 Leads + Tab), SC-63 8-PowerVDFN SOT-23-6 Thin, TSOT-23-6

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Rohm Semiconductor

RDR005N25TL

Rohm Semiconductor
32D-RDR005N25TL

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