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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRE1C002UNTCL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RE1C002UNTCL - Rohm Semiconductor

Manifakti Nimewo Pati
RE1C002UNTCL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RE1C002UNTCL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 200MA EMT3F
Deskripsyon detaye
Pake
SC-89, SOT-490
Done fèy
DTA114EEFRA.pdf
RoHs Status
Nan stok: 703550

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RE1C002UNTCL Tech
Rohm Semiconductor - RE1C002UNTCL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RE1C002UNTCL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 1V @ 1mA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake EMT3F (SOT-416FL)  
Seri -  
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 100mA, 2.5V  
Dissipasyon pouvwa (Max) 150mW (Ta)  
Pake / Ka SC-89, SOT-490  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 25 pF @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.2V, 2.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 200mA (Ta)  
Nimewo pwodwi baz RE1C002  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RE1C002UNTCL.

Pwodwi atribi RE1C002UNTCL RE1C001ZPTL RE1C001UNTCL RE1E002SPTCL
Nimewo Pati RE1C002UNTCL RE1C001ZPTL RE1C001UNTCL RE1E002SPTCL
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.2V, 2.5V 1.2V, 4.5V 1.2V, 4.5V 4V, 10V
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 100mA, 2.5V 3.8Ohm @ 100mA, 4.5V 3.5Ohm @ 100mA, 4.5V 1.4Ohm @ 250mA, 10V
Fèt tip N-Channel P-Channel N-Channel P-Channel
Nimewo pwodwi baz RE1C002 RE1C001 RE1C001 RE1E002
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 30 V
Kouran - Kontini Drain (Id) @ 25 ° C 200mA (Ta) 100mA (Ta) 100mA (Ta) 250mA (Ta)
Vgs (Max) ±8V ±10V ±8V ±20V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 1V @ 1mA 1V @ 100µA 1V @ 100µA 2.5V @ 1mA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri - - - -
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
FET Feature - - - -
Dissipasyon pouvwa (Max) 150mW (Ta) 150mW (Ta) 150mW (Ta) 150mW (Ta)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 25 pF @ 10 V 15 pF @ 10 V 7.1 pF @ 10 V 30 pF @ 10 V
Pake / Ka SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490
Founisè Aparèy pake EMT3F (SOT-416FL) EMT3F (SOT-416FL) EMT3F (SOT-416FL) EMT3F (SOT-416FL)

RE1C002UNTCL fich PDF

Download RE1C002UNTCL PDF fich ak dokiman Rohm Semiconductor pou RE1C002UNTCL - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf EMT3 Part Marking.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf
Fich
DTA114EEFRA.pdf

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Sètifikasyon & Manm

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Rohm Semiconductor

RE1C002UNTCL

Rohm Semiconductor
32D-RE1C002UNTCL

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