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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleRF081MM2STR
RF081MM2STR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RF081MM2STR - Rohm Semiconductor

Manifakti Nimewo Pati
RF081MM2STR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RF081MM2STR
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 800MA PMDU
Deskripsyon detaye
Pake
SOD-123F
Done fèy
RF081MM2STR.pdf
RoHs Status
Nan stok: 287780

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RF081MM2STR Tech
Rohm Semiconductor - RF081MM2STR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RF081MM2STR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 800 mA  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake PMDU  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 25 ns  
Pwodwi atribi Valè atribi  
Pake / Ka SOD-123F  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 150°C (Max)  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 800mA  
Kapasite @ Vr, F -  
Nimewo pwodwi baz RF081  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RF081MM2STR.

Pwodwi atribi RF081MM2STR RF081M2STR RF081MM2STFTR RF08L6STE25
Nimewo Pati RF081MM2STR RF081M2STR RF081MM2STFTR RF08L6STE25
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 800 mA 950 mV @ 800 mA 980 mV @ 1 A 1.3 V @ 800 mA
Kouran - Mwayèn Rectified (Io) 800mA 800mA 800mA 800mA
Pake / Ka SOD-123F SOD-123 SOD-123F DO-214AC, SMA
Kapasite @ Vr, F - - - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kouran - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 600 V
Seri - - Automotive, AEC-Q101 -
Operating Tanperati - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)
Teknoloji Standard Standard Standard Standard
Founisè Aparèy pake PMDU PMDU PMDU PMDS
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Tan rekiperasyon ranvèse (trr) 25 ns 25 ns 25 ns 70 ns
Voltage - DC ranvèse (Vr) (Max) 200 V 200 V 200 V 600 V
Nimewo pwodwi baz RF081 RF081 RF081 RF08L6

RF081MM2STR fich PDF

Download RF081MM2STR PDF fich ak dokiman Rohm Semiconductor pou RF081MM2STR - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Diode Flammability.pdf
Enfòmasyon sou anviwònman an
Diode Whisker Info.pdf Diode Level 1 MSL.pdf

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Sètifikasyon & Manm

Wè plis
RF081MM2STR Image

RF081MM2STR

Rohm Semiconductor
32D-RF081MM2STR

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