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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRF4E080GNTR
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RF4E080GNTR - Rohm Semiconductor

Manifakti Nimewo Pati
RF4E080GNTR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RF4E080GNTR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 8A HUML2020L8
Deskripsyon detaye
Pake
8-PowerUDFN
Done fèy
RF4E080GNTR.pdf
RoHs Status
Nan stok: 266910

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RF4E080GNTR Tech
Rohm Semiconductor - RF4E080GNTR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RF4E080GNTR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake HUML2020L8  
Seri -  
Rds Sou (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V  
Dissipasyon pouvwa (Max) 2W (Ta)  
Pake / Ka 8-PowerUDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 295 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 8A (Ta)  
Nimewo pwodwi baz RF4E080  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RF4E080GNTR.

Pwodwi atribi RF4E080GNTR RF4C100BCTCR RF4C050APTR RF4E075ATTCR
Nimewo Pati RF4E080GNTR RF4C100BCTCR RF4C050APTR RF4E075ATTCR
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 23.5 nC @ 4.5 V 55 nC @ 4.5 V 22 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 8A (Ta) 10A (Ta) 10A (Ta) 7.5A (Ta)
Fèt tip N-Channel P-Channel P-Channel P-Channel
Founisè Aparèy pake HUML2020L8 HUML2020L8 HUML2020L8 HUML2020L8
Pake / Ka 8-PowerUDFN 8-PowerUDFN 8-PowerUDFN 8-PowerUDFN
Vgs (th) (Max) @ Id 2.5V @ 250µA 1.2V @ 1mA 1V @ 1mA 2.5V @ 1mA
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 30 V 20 V 20 V 30 V
Vgs (Max) ±20V ±8V -8V ±20V
Nimewo pwodwi baz RF4E080 RF4C100 RF4C050 RF4E075
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Dissipasyon pouvwa (Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
Seri - - - -
Kapasite Antre (Ciss) (Max) @ Vds 295 pF @ 15 V 1660 pF @ 10 V 5500 pF @ 10 V 1000 pF @ 15 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V 15.6mOhm @ 10A, 4.5V 26mOhm @ 5A, 4.5V 21.7mOhm @ 7.5A, 10V

RF4E080GNTR fich PDF

Download RF4E080GNTR PDF fich ak dokiman Rohm Semiconductor pou RF4E080GNTR - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

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Rohm Semiconductor

RF4E080GNTR

Rohm Semiconductor
32D-RF4E080GNTR

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