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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleRGPR30NS40HRTL
RGPR30NS40HRTL Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RGPR30NS40HRTL - Rohm Semiconductor

Manifakti Nimewo Pati
RGPR30NS40HRTL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RGPR30NS40HRTL
ECAD modèl
Pati Deskripsyon
IGBT 430V 30A IGNITION LPDS
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
RGPR30NS40HRTL.pdf
RoHs Status
Nan stok: 42440

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RGPR30NS40HRTL Tech
Rohm Semiconductor - RGPR30NS40HRTL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RGPR30NS40HRTL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Pèseptè Emitter pann (Max) 430 V  
Vce (sou) (Max) @ Vge, Ic 2.0V @ 5V, 10A  
Kondisyon tès 300V, 8A, 100Ohm, 5V  
Td (sou / sou) @ 25 ° C 500ns/4µs  
Oblije chanje enèji -  
Founisè Aparèy pake LPDS  
Seri Automotive, AEC-Q101  
Pouvwa - Max 125 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati -40°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 22 nC  
Kouran - Pèseptè (Ic) (Max) 30 A  
Nimewo pwodwi baz RGPR30  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RGPR30NS40HRTL.

Pwodwi atribi RGPR30NS40HRTL RGPR30BM40HRTL RGPZ10BM40FHTL RGP20A-E3/54
Nimewo Pati RGPR30NS40HRTL RGPR30BM40HRTL RGPZ10BM40FHTL RGP20A-E3/54
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Vishay General Semiconductor - Diodes Division
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Oblije chanje enèji - - - -
IGBT Kalite - - - -
Kalite Antre Standard Standard Standard -
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Kouran - Pèseptè (Ic) (Max) 30 A 30 A 20 A -
Voltage - Pèseptè Emitter pann (Max) 430 V 430 V 460 V -
Kondisyon tès 300V, 8A, 100Ohm, 5V 300V, 8A, 100Ohm, 5V 300V, 8A, 100Ohm, 5V -
Pouvwa - Max 125 W 125 W 107 W -
Vce (sou) (Max) @ Vge, Ic 2.0V @ 5V, 10A 2.0V @ 5V, 10A 2.0V @ 5V, 10A -
Td (sou / sou) @ 25 ° C 500ns/4µs 500ns/4µs 500ns/4µs -
Founisè Aparèy pake LPDS TO-252 TO-252 GP20
Operating Tanperati -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -
Gate Charge 22 nC 22 nC 14 nC -
Nimewo pwodwi baz RGPR30 RGPR30 RGPZ10 RGP20
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 DO-201AA, DO-27, Axial
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 -

RGPR30NS40HRTL fich PDF

Download RGPR30NS40HRTL PDF fich ak dokiman Rohm Semiconductor pou RGPR30NS40HRTL - Rohm Semiconductor.

Lòt dokiman ki gen rapò
AEC-Q101 Automotive Requirements.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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RGPR30NS40HRTL Image

RGPR30NS40HRTL

Rohm Semiconductor
32D-RGPR30NS40HRTL

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